Comparative analysis of selective area grown Ga- and N-polar InGaN/GaN nanowires for quantum emitters
Source abstract
Abstract
In this paper, we report the molecular beam epitaxy-grown InGaN-quantum disks embedded within selective area epitaxy of GaN nanowires with both Ga- and N-polarities. A detailed comparative analysis of these two types of nanostructures is also provided. Compared to Ga-polar nanowires, N-polar nanowires are found to exhibit a higher vertical growth rate, flatter top, and reduced lateral overgrowth. InGaN quantum disk-related optical emission is observed from nanowires with both polarities; however, the N-polar structures inherently emit at longer wavelengths due to higher indium incorporation. Considering that N-polar nanowires offer more compelling geometry control compared to Ga-polar ones, we focus on the theoretical analysis of only N-polar structures to realize high-performance quantum emitters. A single nanowire-level analysis was performed, and the effects of nanowire diameter, taper length, and angle on guided modes, light extraction, and far-field emission were investigated. These findings highlight the importance of tailoring nanowire geometry and eventually optimizing the growth processes of III-nitride nanostructures.
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Research context
OpenAlex topics: GaN-based semiconductor devices and materials · Semiconductor Quantum Structures and Devices · Nanowire Synthesis and Applications
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Department of Electrical and Computer Engineering, The Ohio State University 1 , Columbus, Ohio 43210, USA
Department of Materials Science and Engineering, University of Michigan 2 , Ann Arbor, Michigan 48109, USA
National Renewable Energy Laboratory 3 , Golden, Colorado 80401, USA
Funding
National Science Foundation
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