Anomalous Nernst effect in epitaxially grown Fe4−xNixN films
Abstract
Research context
OpenAlex topics: GaN-based semiconductor devices and materials · Thermal properties of materials · Semiconductor materials and devices
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Affiliations
Institute for Materials Research, Tohoku University 1 , Sendai 980-8577, Japan
Department of Materials Science, Graduate School of Engineering, Tohoku University 2 , Sendai 980-8579, Japan
Center for Spintronics Research Network, Tohoku University 3 , Sendai 980-8577, Japan
Research Institute of Electrical Communication, Tohoku University 4 , Sendai 980-8577, Japan
Department of Electronic Engineering, Graduate School of Engineering, Tohoku University 5 , Sendai 980-8579, Japan
Center for Science and Innovation in Spintronics, Core Research Cluster, Tohoku University 6 , Sendai 980-8577, Japan
Funding
Japan Society for the Promotion of Science · Collaborative Research Center on Energy Materials, Institute for Materials Research, Tohoku University · Cooperative Research Project of the Research Institute of Electric Communication, Tohoku University