journal article·2022-03-01Open access

The effect of high pressure on the electrical and transport properties of the InSb-MnSb magnetic eutectic composition

A. V. Kochura, R. G. Dzhamamedov, A. B. Mekhiya, L. N. Oveshnikov, T. R. Arslanov, V. V. Rodionov, M. Alam, A. P. Kuzmenko, A. B. Davydov, B. A. Aronzon

AIP Advances· Volume 12· Issue 3

Abstract

In this work we studied transport properties of eutectic InSb-MnSb crystals with oriented MnSb needle-like inclusions under a hydrostatic pressure up to P = 8 GPa and after its application. We show that the pressure-induced variation of the samples resistivity and transport parameters at room temperature can be interpreted in the terms of crystal phase transition of the InSb matrix. We argue that the irreversibility of this transition, deduced from transport measurements, may stem from the composite nature of the crystals studied. The resistivity of the samples subjected to high pressures increases upon cooling, which can be a consequence of the increased disorder accompanying the irreversible transition. Magnetotransport data for these samples suggest that charge carriers interact with a low-temperature magnetic phase. The latter can be formed by isolated Mn atoms in the InSb matrix.
Source: crossref · Quality: baseline

Research context

OpenAlex topics: ZnO doping and properties · Semiconductor Quantum Structures and Devices · Electronic and Structural Properties of Oxides

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Regional Centre of Nanotechnology, South-West State University 1 , 305040 Kursk, Russia

Amirkhanov Institute of Physics, Daghestan Scientific Center, Russian Academy of Sciences 2 , 367003 Makhachkala, Russia

P.N. Lebedev Physical Institute, Russian Academy of Sciences 3 , 119991 Moscow, Russia

Bangamata Sheikh Fojilatunnesa Mujib Science and Technology University 4 , Jamalpur, Bangladesh

Funding

Russian Science Foundation · Ministry of Science and Higher Education of the Russian Federation

References (28)

Show source-provided references
1. Advanced Materials · 2014 · 26 · 807910.1002/adma.201403136 ↗
2. Vacuum · 2020 · 179 · 10940510.1016/j.vacuum.2020.109405 ↗
3. Progress in Materials Science · 2019 · 99 · 2710.1016/j.pmatsci.2018.08.001 ↗
4. Russian Journal of Inorganic Chemistry · 2011 · 56 · 195110.1134/s0036023611120400 ↗
5. Inorganic Materials · 2016 · 52 · 42310.1134/s0020168516040105 ↗
6. Phys. Rev. Lett. · 2005 · 95 · 26990210.1103/physrevlett.95.269902 ↗
7. Nature Materials · 2008 · 7 · 69710.1038/nmat2259 ↗
8. Scientific Reports · 2016 · 6 · 2182110.1038/srep21821 ↗
9. High Pressure Res. · 2004 · 24 · 37110.1080/08957950412331298761 ↗
10. Phys. Rev. · 1955 · 99 · 49010.1103/physrev.99.490 ↗
11. Nature · 1960 · 188 · 109510.1038/1881095a0 ↗
12. Nature · 1961 · 191 · 128810.1038/1911288a0 ↗
13. Nature · 1962 · 196 · 76210.1038/196762a0 ↗
14. Science · 1963 · 139 · 84510.1126/science.139.3557.845 ↗
15. Phys. Rev. Lett. · 1982 · 49 · 143810.1103/physrevlett.49.1438 ↗
16. Phys. Rev. B · 1993 · 47 · 484110.1103/physrevb.47.4841 ↗
17. Phys. Rev. B · 1993 · 47 · 3510.1103/physrevb.47.35 ↗
18. Rev. Mod. Phys. · 2003 · 75 · 86310.1103/revmodphys.75.863 ↗
19. J. Supercond. Nov. Magn. · 2014 · 27 · 125710.1007/s10948-013-2427-6 ↗
20. Rev. Mod. Phys. · 2010 · 82 · 153910.1103/revmodphys.82.1539 ↗
21. JETP Lett. · 2015 · 101 · 13010.1134/s0021364015020149 ↗
22. Scientific Reports · 2015 · 5 · 1715810.1038/srep17158 ↗
23. Semiconductors · 2017 · 51 · 131310.1134/s1063782617100177 ↗
24. Phys. Rev. B · 1983 · 27 · 49510.1103/physrevb.27.495 ↗
25. Advanced Materials · 2019 · 31 · 190024610.1002/adma.201900246 ↗
26. Solid State Communications · 1990 · 75 · 93510.1016/0038-1098(90)90413-6 ↗
27. Phys. Rev. B · 1991 · 43 · 721210.1103/physrevb.43.7212 ↗
28. Phil. Mag. B · 1992 · 65 · 72310.1080/13642819208204909 ↗