Resolving surface potential variation in Ge/MoS2 heterostructures with Kelvin probe force microscopy
Source abstract
Abstract
In this work, we employ an atomic force microscopy-based technique, Kelvin probe force microscopy, to analyze heterogeneities of four different 2D/3D Ge/MoS2 heterostructures with Ge chemical vapor deposition (CVD) time. High-contrast spatially resolved contact potential difference (CPD) maps reveal the evolution of the samples by Ge deposition. The CPD map in an as-prepared sample does not display any heterogeneity, but CPD contrasts along the grain boundaries are obviously noticed as Ge is deposited on MoS2. With a sufficiently long Ge CVD deposition time, strong grain-to-grain CPD variations over the 2D/3D heterostructures are observed. The results show the variations of the work function from grain to grain that are attributed to the strain induced by the Ge island formation on the cracked MoS2 initiated by sulfur vacancies.
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Research context
OpenAlex topics: 2D Materials and Applications · Force Microscopy Techniques and Applications · Nanowire Synthesis and Applications
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Korea Aerospace University, Department of Materials Engineering 1 , Goyang, Republic of Korea
Center for Integrated Nanotechnologies, Los Alamos National Laboratory 2 , Los Alamos, New Mexico 87545, USA
Materials and Science Engineering, University of Utah 3 , Salt Lake City, Utah 84112, USA
Fakultät für Physik, Ludwig-Maximilians-Universität München 4 , Geschwister-Scholl-Platz 1, 80539 München, Germany
Department of Physics, Northeastern University 5 , Boston, Massachusetts 02115, USA
Electrical and Computer Engineering, University of Utah 6 , Salt Lake City, Utah 84112, USA
Funding
2020 Korea Aerospace University Faculty Research Grant · MRSEC Program of NSF
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