Determination of doping concentration of heavily doped silicon wafers using photon reabsorption in photocarrier radiometry
Source abstract
Abstract
A contactless and non-destructive method for the determination of the doping concentration of heavily doped silicon wafers is proposed. The method is based on a comparison between photocarrier radiometry signals acquired from different surfaces of samples and a comprehensive mathematical model by exploiting photon reabsorption in photocarrier radiometry measurements. With the proposed mathematical model, the influence of experimental and sample parameters on the measurement of the doping concentration is analyzed in detail. The uncertainties and limitations of the method are also discussed. Furthermore, an experimental configuration is proposed.
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Research context
OpenAlex topics: Thermography and Photoacoustic Techniques · Calibration and Measurement Techniques · Silicon and Solar Cell Technologies
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
School of Optoelectronic Engineering, Xi’an Technological University , Xi’an 710021, China
Funding
Special Scientific Research Program Funded by Shaanxi Provincial Department · Special Scientific Research Program Funded by Shaanxi Provincial Education Department · National Natural Science Foundation in Shaanxi Province of China · National Natural Science Foundation of China
References (34)
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