journal article·2018-10-01Open access

Nonlinear dielectric property of InP under strong microwave field

Yong Gao, En Li, Chengyong Yu, Gaofeng Guo

AIP Advances· Volume 8· Issue 10

Abstract

In this paper, the dielectric properties of indium phosphide (InP) are investigated under a strong microwave field. By introducing a re-entrant coaxial cavity, the strong microwave field is constructed, and the dielectric properties of the material are monitored using the cavity perturbation method. It is shown that the dielectric properties of InP changes obviously under the given strong microwave field. From the experimental results and theoretical analysis, we conclude that the nonlinear behaviour is caused by a kind of non-thermal microwave effect. The experimental setup and method could also be applied to predict the consequences of non-thermal microwave effects of other high power microwave materials under strong microwave field.
Source: crossref · Quality: baseline

Research context

OpenAlex topics: Semiconductor Quantum Structures and Devices · Photonic and Optical Devices · Terahertz technology and applications

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

School of Electronic Science and Engineering, University of Electronic Science and Technology of China 1 , Chengdu 611731, China

National Engineering Research Center of Electromagnetic Radiation Control Materials 2 , Chengdu 611731, China

Funding

National Natural Science Foundation of China

References (28)

Show source-provided references
1. Org. Electron. · 2013 · 14 · 146710.1016/j.orgel.2013.02.018 ↗
2. J. Vac. Technol., B · 2009 · 27 · 41610.1116/1.3021040 ↗
3. J. Nucl. Mater. · 2009 · 392 · 37110.1016/j.jnucmat.2009.03.027 ↗
4. J. Mater. Sci. · 1974 · 9 · 171510.1007/bf00540772 ↗
5. Surf. Coat. Tech. · 2009 · 203 · 263710.1016/j.surfcoat.2009.02.084 ↗
6. Vaccum · 2001 · 63 · 65710.1016/s0042-207x(01)00254-8 ↗
7. J. Appl. Phys. · 2005 · 97 · 12353210.1063/1.1938279 ↗
8. Radiat. Eff. Def. Solids. · 2013 · 168 · 55710.1080/10420150.2013.789027 ↗
9. J. Appl. Phys. · 1997 · 81 · 111610.1063/1.363855 ↗
10. Appl. Phys. Lett. · 2012 · 100 · 01210710.1063/1.3673906 ↗
11. Phys. Part. Nucl. · 2010 · 64 · 23010.1134/s1063779610020024 ↗
12. Appl. Phys. Lett. · 2017 · 110 · 21290210.1063/1.4984089 ↗
13. Mater. Charact. · 2008 · 59 · 67510.1016/j.matchar.2007.05.022 ↗
14. J. Appl. Phys. · 2000 · 88 · 533410.1063/1.1314327 ↗
15. Phys. Wave Phenom. · 2013 · 21 · 5210.3103/s1541308x1301010x ↗
16. Phys. B · 2016 · 503 · 11710.1016/j.physb.2016.09.028 ↗
17. Tech. Phys. · 2007 · 52 · 117310.1134/s1063784207090113 ↗
18. Tech. Phys. · 1998 · 43 · 114510.1134/1.1259222 ↗
19. J. Lumin. · 2017 · 192 · 129510.1016/j.jlumin.2017.09.013 ↗
20. Semi. · 2008 · 42 · 86810.1134/s1063782608070191 ↗
21. J. Lumin. · 2016 · 178 · 6810.1016/j.jlumin.2016.05.032 ↗
22. Semi. · 2011 · 45 · 113310.1134/s1063782611090119 ↗
23. Semi. · 2015 · 49 · 89510.1134/s1063782615070209 ↗
24. Tech. Phys. · 2015 · 60 · 43210.1134/s1063784215030299 ↗
25. Tech. Phys. · 2002 · 28 · 15410.1134/1.1458520 ↗
26. Appl. Phys. Lett. · 2006 · 89 · 23290110.1063/1.2399336 ↗
27. IEEE Trans. Microw. Theory Tech. · 2016 · 64 · 387810.1109/tmtt.2016.2614509 ↗
28. IEEE Trans. Instrum. Meas. · 2015 · 64 · 99510.1109/tim.2014.2362433 ↗