Effects of insulating vanadium oxide composite in concomitant mixed phases via interface barrier modulations on the performance improvements in metal-insulator-metal diodes
Source abstract
Abstract
The performance of metal-insulator-metal diodes is investigated for insulating vanadium oxide (VOx) composite composed of concomitant mixed phases using the Pt metal as the top and the bottom electrodes. Insulating VOx composite in the Pt/VOx/Pt diode exhibits a high asymmetry of 10 and a very high sensitivity of 2,135V−1 at 0.6 V. The VOx composite provides Schottky-like barriers at the interface, which controls the current flow and the trap-assisted conduction mechanism. Such dramatic enhancement in asymmetry and rectification performance at low applied bias may be ascribed to the dynamic control of the insulating and metallic phases in VOx composites. We find that the nanostructure details of the insulating VOx layer can be critical in enhancing the performance of MIM diodes.
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Research context
OpenAlex topics: Advanced Memory and Neural Computing · Transition Metal Oxide Nanomaterials · Gas Sensing Nanomaterials and Sensors
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Department of Physics and Energy Science, Sungkyunkwan University , 2066, Seobu-ro, Jangan-gu, Suwon, Gyeonggi-do 16419, Republic of Korea
Funding
National Research Foundation of Korea
References (44)
Show source-provided references
1. Electric tunnel effect between dissimilar electrodes separated by a thin insulating film10.1063/1.1729774 ↗
2. High yield transfer printing of metal-insulator-metal nanodiodes10.1021/nn3004058 ↗
3. Poole-Frenkel effect and Schottky effect in metal-insulator-metal systems10.1103/physrev.155.657 ↗
4. Hot-electron photodetection with a plasmonic nanostripe antenna10.1021/nl4044373 ↗
5. Plasmon-induced hot carrier science and technology10.1038/nnano.2014.311 ↗
6. Quantum theory of operation for rectenna solar cells10.1088/0022-3727/46/13/135106 ↗
7. Efficiency limits of rectenna solar cells: Theory of broadband photon-assisted tunneling10.1063/1.4793425 ↗
8. Design of optical antenna for solar energy collection10.1016/j.energy.2011.02.026 ↗
9. Solar energy collection by antennas10.1016/s0038-092x(03)00033-1 ↗
10. Localized ohmic contact through a passivation dielectric for solar cell rear surface design10.1063/1.4809820 ↗
11. Efficient waveguide-integrated tunnel junction detectors at 1.6 μm10.1364/oe.15.016376 ↗
12. Traveling-wave metal/insulator/metal diodes for improved infrared bandwidth and efficiency of antenna-coupled rectifiers10.1109/tnano.2010.2051334 ↗
13. Two series oxide resistors applicable to high speed and high density nonvolatile memory10.1002/adma.200700251 ↗
14. Investigation of switching phenomenon in metal-tantalum oxide interface10.1166/jnn.2015.11133 ↗
15. Experimental confirmation of the Fowler Nordheim plot at several micro-meters emitter to another distance
16. MIM tunnel cathodes for the 1:1 electron stepper-technology of preparation and structure description10.1080/00207219208925725 ↗
17. Effect of deep traps on the barrier heights of metal-insulator-metal tunnel junctions10.1103/physrevlett.23.297 ↗
18. Metal-insulator-metal diodes: Role of the insulator layer on the rectification performance10.1002/adma.201203075 ↗
19. Fabrication and characterization of MIM diodes based on Nb/Nb2O5 via a rapid screening technique10.1002/adma.201101115 ↗
20. Self-assembled oxide films with tailored nanoscale ionic and electronic channels for controlled resistive switching10.1038/ncomms12373 ↗
21. Conduction mechanism of TiN/HfOx/Pt resistive switching memory: A trap-assisted-tunneling model10.1063/1.3624472 ↗
22. Tunneling-assisted Poole-Frenkel conduction mechanism in HfO2 thin films10.1063/1.2135895 ↗
23. 1990
24. Oxide electronics and vanadium dioxide perspective: A review10.15393/j8.art.2013.3002 ↗
25. Control of multilevel resistance in vanadium dioxide by electric field using hybrid dielectrics10.1021/acsami.6b16424 ↗
26. Multimode resistive switching in single ZnO nanoisland system10.1038/srep02405 ↗
27. Dynamic evolution of conducting nanofilament in resistive switching memories10.1021/nl4015638 ↗
28. Anatomy of a nanoscale conduction channel reveals the mechanism of a high-performance memristor10.1002/adma.201103379 ↗
29. Atomic structure of conducting nanofilaments in TiO2 resistive switching memory10.1038/nnano.2009.456 ↗
30. Characteristic curves of voltage and current, phase generation and properties of tungsten- and vanadium-oxides deposited by reactive d.c.-MSIP-PVD-process for self-lubricating applications10.1016/s0257-8972(01)01318-4 ↗
31. 1986
32. Novel electroforming-free nanoscaffold memristor with very high uniformity, tunability, and density10.1002/adma.201401917 ↗
33. Current transport mechanism in trapped oxides: A generalized trap-assisted tunneling model10.1063/1.370918 ↗
34. Trap-assisted tunneling, capacitance-voltage characteristics, and surface properties of Sm2O3 thin film on Si substrate10.1007/s10854-016-6115-8 ↗
35. Coexistence of filamentary and homogeneous resistive switching in Fe-doped SrTiO3 thin-film memristive devices10.1002/adma.201001872 ↗
36. Direct observation of conversion between threshold switching and memory switching induced by conductive filament morphology10.1002/adfm.201401304 ↗
37. Ultrathin and atomically flat transition-metal oxide: Promising building blocks for metal–insulator electronics10.1021/acsami.6b11302 ↗
38. Conduction mechanism of leakage current due to the traps in ZrO2 thin film10.1088/0268-1242/24/11/115016 ↗
39. Current conduction mechanisms in Pr2O3/oxynitride laminated gate dielectrics10.1063/1.3103282 ↗
40. Conduction mechanism of leakage current in Ta2O5 films on Si prepared by LPCVD10.1149/1.2087091 ↗
41. Enhanced low voltage nonlinearity in resonant tunneling metal–insulator–insulator–metal nanostructures10.1016/j.mee.2015.04.110 ↗
42. Enhanced rectifying response from metal-insulator-insulator-metal junctions10.1063/1.3671071 ↗
43. Impact of defect distribution on resistive switching characteristics of Sr2TiO4 thin films10.1002/adma.200901493 ↗
44. Ni–NiO–Ni tunnel junctions for terahertz and infrared detection10.1364/ao.44.006813 ↗