journal article·2017-05-01Open access

Micromagnetic simulation of electric-field-assisted magnetization switching in perpendicular magnetic tunnel junction

Chikako Yoshida, Hideyuki Noshiro, Yuichi Yamazaki, Toshihiro Sugii, Tomohiro Tanaka, Atsushi Furuya, Yuji Uehara

AIP Advances· Volume 7· Issue 5

Abstract

The feasibility of a voltage assisted unipolar switching in perpendicular magnetic tunnel junction (MTJ) has been studied using a micromagnetic simulation. Assuming a linear modulation of anisotropy field with voltage, both parallel (P) to anti-parallel (AP) and AP to P switchings were observed by application of unipolar voltage pulse without external magnetic field assistance. In latter case, the final P state can only be achieved with an ultrashort voltage pulse which vanishes before spin transfer torque (STT) becomes dominant to restore the initial AP state. In addition, it was found that the larger change in anisotropy field is required for the MTJ with smaller diameter.
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Research context

OpenAlex topics: Magnetic properties of thin films · Quantum and electron transport phenomena · Gyrotron and Vacuum Electronics Research

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Affiliations

Fujitsu Limited 1 , 10-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0197, Japan

Fujitsu Limited 2 , 4-1-1 Kamikodanaka, Nakahara-ku, Kawasaki, Kanagawa 211-8588, Japan

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