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journal article·2016-10-01Open access

Nonlinear laser ultrasound formation in silicon

Kateryna Voitenko, Vitaliy Veleschuk, Mykola Isaiev, Andrey Kuzmich, Oleg Lyashenko, Oleksandr Vlasenko, Mykola Melnychenko, Eugene Malyarenko, Sergey Zhelnakov, Vladimir Lysenko, Roman Burbelo

AIP Advances· Volume 6· Issue 10
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Source abstract

Abstract

In this paper, the mechanisms of laser ultrasound response formation in monocrystalline silicon are discussed. The ultrasound waves in the test specimen were generated with laser pulses of two different wavelengths and registered with a piezoelectric transducer. The amplitude of the measured signal was found to be a nonlinear function of the laser radiation intensity. It was shown, that the observed nonlinearity is related to the features of optical absorption and thermoelastic sources formation in the material. A simple model taking into account temperature dependencies of the thermal conductivity and thermal expansion coefficient was developed. An excellent agreement between experimental and simulation for different wavelengths was demonstrated.
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Research context

OpenAlex topics: Photoacoustic and Ultrasonic Imaging · Thermography and Photoacoustic Techniques · Ultrasonics and Acoustic Wave Propagation

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Taras Shevchenko National University of Kyiv 1 , 64/13, Volodymyrska St., 01601 Kyiv, Ukraine

National Academy of Sciences of Ukraine 2 Institute of Semiconductor Physics, , 41, Nauki Ave., 03028 Kyiv, Ukraine

Université de Lorraine 3 Laboratoire LEMTA, Faculté des Sciences et Technologies, CNRS UMR 7563, , BP 70239 Vandoeuvre les Nancy Cedex, France

Tessonics Corporation 4 , 2019 Hazel Street, Birmingham, Michigan 48009, USA

Institute for Diagnostic Imaging Research 5 , 688 University Avenue West, Windsor, Ontario N9A 5R5, Canada

Université de Lyon 6 Institut des Nanotechnologies de Lyon, CNRS, , 7 Avenue Jean Capelle, Baîtiment Blaise Pascal, Villeurbanne, France

References (31)

Show source-provided references
1. Ultrasonics · 2004 · 42 · 910.1016/j.ultras.2004.01.101 ↗
2. Appl. Mech. Mater. · 2014 · 528 · 34610.4028/www.scientific.net/AMM.528.346 ↗
3. Opt. Laser Technol. · 2015 · 73 · 17310.1016/j.optlastec.2015.04.026 ↗
4. J. Biomed. Opt. · 2012 · 17 · 06120210.1117/1.JBO.17.6.061202 ↗
5. Review of Scientific Instruments · 2014 · 85 · 110.1063/1.4890666 ↗
6. J. Biomed. Opt. · 2014 · 19 · 02090110.1117/1.JBO.19.2.020901 ↗
7. Generation of elastic waves by transient surface heating10.1063/1.1729258 ↗
8. J. Appl. Phys. · 1980 · 51 · 621010.1063/1.327601 ↗
9. J. Appl. Phys. · 1982 · 53 · 406410.1063/1.331270 ↗
10. J. Phys. D. Appl. Phys. · 1986 · 19 · 161310.1088/0022-3727/19/9/007 ↗
11. Appl. Phys. Lett. · 1990 · 56 · 23010.1063/1.102839 ↗
12. Arch. Metall. Mater. · 2013 · 58 · 1510.2478/amm-2013-0173 ↗
13. Vitr. Porous Semicond. · 2003 · 37 · 485
14. J. Phys. Conf. Ser. · 2010 · 214 · 01205410.1088/1742-6596/214/1/012054 ↗
15. Ultrasonics · 2014 · 54 · 3910.1016/j.ultras.2013.05.013 ↗
16. Ultrasonics · 2015 · 56 · 310.1016/j.ultras.2014.06.005 ↗
17. Ultrasonics · 2015 · 56 · 3610.1016/j.ultras.2014.09.021 ↗
18. Ukr. J. Phys. · 2011 · 56 · 168
19. Semiconductors · 2008 · 42 · 28110.1134/S106378260803007X ↗
20. Ukr. J. Phys. · 2010 · 55 · 317
21. Arch. Metall. Mater. · 2011 · 56 · 115710.2478/v10172-011-0129-2 ↗
22. Phys. Solid State · 2015 · 57 · 108910.1134/S1063783415060347 ↗
23. Opt. Express · 2015 · 23 · 797810.1364/oe.23.007978 ↗
24. 2000
25. J. Appl. Phys. · 1953 · 24 · 98810.1063/1.1721449 ↗
26. Sov Phys Solid State · 1972 · 13 · 2516
27. J. Appl. Phys. · 1984 · 56 · 31410.1063/1.333965 ↗
28. J. Appl. Phys. · 1981 · 52 · 499510.1063/1.329440 ↗
29. Phys. Rev. A · 1964 · 134 · 105810.1103/physrev.134.a1058 ↗
30. Tech. Phys. Lett. · 2014 · 40 · 18810.1134/S1063785014030146 ↗
31. Review of Scientific Instruments · 2006 · 77 · 04110110.1063/1.2195024 ↗