Ni ohmic contacts to n-type Ge1−x−ySixSny using phosphorous implant and segregation
Source abstract
Abstract
N-type Ge1−x−ySixSny ternary alloy was successfully grown by the Sb in situ doping technique through sputter epitaxy method. A study comparing the electrical contact characteristic of n- Ge1−x−ySixSny with and without phosphorous implantation was performed. Ohmic contacts to n-type Ge1−x−ySixSny are realized by shallow P implant and Ni(Ge1−x−ySixSny) formation after rapid thermal annealing at 400 °C. It is proposed that the ohmic behavior is mainly attributed to the phosphorous segregation effect confirmed by secondary ion mass spectroscopy.
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Research context
OpenAlex topics: Photonic and Optical Devices · Semiconductor materials and devices · Semiconductor materials and interfaces
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Chinese Academy of Sciences State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, , Beijing 100083, China
Funding
National Natural Science Foundation of China · Youth Innovation Promotion Association of the Chinese Academy of Sciences
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