Dependence of the incorporated boron concentration near SiO2/4H–SiC interface on trap passivation reduction
Source abstract
Abstract
By systematically varying the boron concentration near the oxide/4H–SiC interface within a specifically designed boron-diffusion layer oxide structure, this paper explores the influence of boron concentration on interface state density and near-interface trap density in 4H–SiC MOS capacitors. Additionally, the effect of boron near the oxide/4H–SiC interface on device stability under elevated temperature conditions was examined. The boron species were introduced into the SiO2/4H–SiC interface by spin coating followed by annealing, whose temperature controls the amount of boron present in the near interface region. It is suggested that a higher concentration of boron leads to a better trap passivation effect while preserving the stability of flat band voltage.
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Research context
OpenAlex topics: Silicon Carbide Semiconductor Technologies · Semiconductor materials and devices · Silicon and Solar Cell Technologies
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Department of Materials Engineering, School of Engineering, The University of Tokyo 1 , 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan
Advanced Technology R&D Center, Mitsubishi Electric Corporation 2 , Amagasaki, Hyogo 661-8661, Japan
Department of Advanced Materials Science, Graduate School of Frontier Sciences, The University of Tokyo 3 , 5-1-5 Kashiwanoha, Kashiwa-shi, Chiba 277-8561, Japan
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