journal article·2020-06-01Open access

Impacts of oxygen radical ambient on structural and optical properties of (AlGa)2O3 films deposited by pulsed laser deposition

Fabi Zhang, Congyu Hu, Makoto Arita, Katsuhiko Saito, Tooru Tanaka, Qixin Guo

AIP Advances· Volume 10· Issue 6

Abstract

We report on the impacts of oxygen radical ambient for (AlGa)2O3 films grown on sapphire substrates by pulsed laser deposition (PLD). All the films showed a monoclinic crystal structure and high transmittance in the ultraviolet and visible wavelength range. The surface roughness was less than 3 nm for all films, and the surface morphology has changed by applying oxygen radical ambient. The growth rate was faster in oxygen radical ambient compared with conventional oxygen ambient. Oxygen radical ambient has influences on the crystal quality of the (AlGa)2O3 films. The Ga content in β-(AlGa)2O3 films grown with oxygen plasma assistance was higher than that without the oxygen plasma, indicating the suppression of the re-evaporation of Ga related species from the film surface by plasma assistance during the PLD process.
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Research context

OpenAlex topics: Ga2O3 and related materials · ZnO doping and properties · Semiconductor materials and devices

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Guangxi Key Laboratory of Precision Navigation Technology and Application, Guilin University of Electronic Technology 1 , Guilin 541004, China

Department of Electrical and Electronic Engineering, Synchrotron Light Application Center, Saga University 2 , Saga 840-8502, Japan

Department of Materials Science and Engineering, Faculty of Engineering, Kyushu University 3 , 744 Motooka, Fukuoka 819-0395, Japan

Funding

Japan Society for the Promotion of Science · National Natural Science Foundation of China · Science and Technology Department of Guangxi Zhuang Autonomous

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