Duality characteristics of bipolar and unipolar resistive switching in a Pt/SrZrO3/TiOx/Pt stack
Source abstract
Abstract
The mechanism of irreversible resistive switching (RS) conversion from bipolar to unipolar operation is investigated in a capacitor structure, SrZrO3/TiOx/Pt, prepared on a Pt/Ti/SiO2/Si substrate. Bipolar RS memory current–voltage characteristics are observed in the RS voltage window from +2.5 V to −1.9 V, which shows excellent durability and retention characteristics. As the voltage bias is increased to greater than +4 V, an additional forming process occurs, irreversibly converting the RS mode from the bipolar to the unipolar mode. In this study, two materials are combined with different switching mechanisms to enable the fabrication of RS memory with desirable characteristics in different current regions.
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Research context
OpenAlex topics: Advanced Memory and Neural Computing · Ferroelectric and Negative Capacitance Devices · Electronic and Structural Properties of Oxides
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Center for Opto-Electronic Materials and Devices, Korea Institute of Science and Technology 1 , Seoul 02792, South Korea
Department of IT Convergence Engineering & Intelligent Electronic Device Lab, Sahmyook University 2 , 815 Hwarang-ro, Nowon-Gu, Seoul 01795, South Korea
Funding
National Research Foundation of Korea
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