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journal article·2020-05-01Open access

Faraday-cage-assisted etching of suspended gallium nitride nanostructures

Geraint P. Gough, Angela D. Sobiesierski, Saleem Shabbir, Stuart Thomas, Daryl M. Beggs, Robert A. Taylor, Anthony J. Bennett

AIP Advances· Volume 10· Issue 5
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Source abstract

Abstract

We have developed an inductively coupled plasma etching technique using a Faraday cage to create suspended gallium-nitride devices in a single step. The angle of the Faraday cage, gas mix, and chamber condition define the angle of the etch and the cross-sectional profile, which can feature undercut angles of up to 45°. We fabricate singly- and doubly-clamped cantilevers of a triangular cross section and show that they can support single optical modes in the telecom C-band.
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Research context

Nanomaterials

OpenAlex topics: Mechanical and Optical Resonators · Acoustic Wave Resonator Technologies · Photonic and Optical Devices

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

School of Physics and Astronomy, Cardiff University 1 , Queen’s Buildings, Cardiff CF24 3AA, United Kingdom

The Bristol Centre for Nanoscience and Quantum Information 2 , 5 Tyndall Ave., Bristol BS8, United Kingdom

Institute for Compound Semiconductors, Cardiff University 3 , Queen’s Buildings, Cardiff CF24 3AA, United Kingdom

Clarendon Laboratory, Department of Physics, University of Oxford 4 , Parks Road, Oxford OX1 3PU, United Kingdom

School of Engineering, Cardiff University 5 , Queen’s Buildings, Cardiff CF24 3AA, United Kingdom

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