Inverse spin Hall effects in Nd doped SrTiO3

Conversion of spin to charge current was observed in SrTiO3 doped with Nd (Nd:STO), which exhibited a metallic behavior even with low concentration doping. The obvious variation of DC voltages for Py/Nd:STO, obtained by inverting the spin diffusion direction, demonstrated that the detected signals contained the contribution from the inverse spin Hall effect (ISHE) induced by the spin dependent scattering from Nd impurities with strong spin-orbit interaction. The DC voltages of the ISHE for Nd:STO were measured at different microwave frequency and power, which revealed that spin currents were successfully injected into doped STO layer by spin pumping. The linear relation between the ISHE resistivity and the resistivity induced by impurities implied that the skew scattering was the dominant contribution in this case, and the spin Hall angle was estimated to be (0.17±0.05)%. This work demonstrated that extrinsic spin dependent scattering in oxides can be used in spintronics besides that in heavy elements doped metals.