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journal article·2016-03-01Open access

Real-time observation of rotational twin formation during molecular-beam epitaxial growth of GaAs on Si (111) by x-ray diffraction

Hidetoshi Suzuki, Yuka Nakata, Masamitu Takahasi, Kazuma Ikeda, Yoshio Ohshita, Osamu Morohara, Hirotaka Geka, Yoshitaka Moriyasu

AIP Advances· Volume 6· Issue 3
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Source abstract

Abstract

The formation and evolution of rotational twin (TW) domains introduced by a stacking fault during molecular-beam epitaxial growth of GaAs on Si (111) substrates were studied by in situ x-ray diffraction. To modify the volume ratio of TW to total GaAs domains, GaAs was deposited under high and low group V/group III (V/III) flux ratios. For low V/III, there was less nucleation of TW than normal growth (NG) domains, although the NG and TW growth rates were similar. For high V/III, the NG and TW growth rates varied until a few GaAs monolayers were deposited; the mean TW domain size was smaller for all film thicknesses.
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Research context

OpenAlex topics: Semiconductor Quantum Structures and Devices · GaN-based semiconductor devices and materials · Semiconductor materials and devices

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

University of Miyazaki 1 Faculty of Engineering, , 1-1 Gakuen-Kibanadai-Nishi, Miyazaki 889-2192, Japan

University of Hyogo 2 Graduate School of Materials Science, , 3-2-1 Koto, Kamigori-cho, Hyogo 678-1297, Japan

Japan Atomic Energy Agency 3 Quantum Beam Science Center, , 1-1-1 Koto, Sayo-cho, Hyogo 679-5148, Japan

Toyota Technological Institute 4 , 2-12-1 Hisakata, Tempaku, Nagoya 468-8511, Japan

Advanced Devices and Sensor Systems Development Center 5 , Asahi Kasei Co. Ltd., 2-1 Samejima, Fuji 416-8501, Japan

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