Arrhenius behavior of crystallization at up to 184 000 K/s in Ge2Sb2Te5 thin films

We investigate the glass transition and crystallization of Ge2Sb2Te5 by nanocalorimetry on 32–57 nm layers at temperature scanning rates ranging from 23 to 184 kK/s. Crystallization follows the Arrhenius behavior observed at low heating rates, with an activation energy of 2.7 ± 0.1 eV. The crystal-growth velocity (>500 µm/s at 500 K) confirms fast values found in earlier work and by ab initio molecular dynamics simulations. These experiments also outline the importance of carrying out ultra-fast scanning calorimetry studies with samples in excellent thermal contact with the heating device.