Analytical modeling electrical conduction in resistive-switching memory through current-limiting-friendly combination frameworks
Source abstract
Abstract
Resistive-switching memory (RSM) is one of the most promising candidates for next-generation edge computing devices due to its excellent device performance. Currently, a number of experimental and modeling studies have been reported to understand the conduction behaviors. However, a complete physical picture that can describe the conduction behavior is still missing. Here, we present a conduction model that not only fully accounts for the rich conduction behaviors of RSM devices by harnessing a combination of electronic and thermal considerations via electron mobility and trap-depth and with excellent accuracy but also provides critical insight for continued design, optimization, and application. A physical model that is able to describe both the conduction and switching behaviors using only a single set of expressions is achieved. The proposed model reveals the role of temperature, mobility of electrons, and depth of traps, and allows accurate prediction of various set and reset processes obtained by an entirely new set of general current-limiting parameters.
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Research context
OpenAlex topics: Advanced Memory and Neural Computing · Ferroelectric and Negative Capacitance Devices · Electronic and Structural Properties of Oxides
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Department of Science, Mathematics and Technology, Singapore University of Technology and Design 1 , 8 Somapah Road, 487372, Singapore
Department of Electronic Engineering, Chang Gung University 2 , Guishan District, Taoyuan City 33302, Taiwan
Department of Urology, Chang Gung University 3 , Guishan District, Taoyuan City 33302, Taiwan
Center of Reliability Science and Technology, Chang Gung University 4 , Guishan District, Taoyuan City 33302, Taiwan
Center of Reliability Engineering, Ming Chi University of Technology 5 , Taishan District, New Taipei City 243, Taiwan
Department of Neurosurgery, Chang Gung Memorial Hospital, Linkou 6 , Guishan District, Taoyuan City 33305, Taiwan
Department of Electronic Engineering, Ming Chi University of Technology 7 , Taishan District, New Taipei City 243303, Taiwan
Funding
Ministry of Science and Technology, Taiwan · Chang Gung Memorial Hospital, Linkou
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