Zero-field topological Hall effect as evidence of ground-state skyrmions at room temperature in BiSb/MnGa bilayers
Source abstract
Abstract
We observe the signature of zero-field ground-state skyrmions in BiSb topological insulator/MnGa bilayers by using the topological Hall effect (THE). We observe a large critical interfacial Dzyaloshinskii-Moriya-Interaction (DMI) energy (DCS = 5.0 pJ/m) at the BiSb/MnGa interface that can be tailored by controlling the annealing temperature of the MnGa template. The THE was observed at room temperature even under the absence of an external magnetic field, which gives strong evidence of the existence of thermodynamically stable skyrmions in the MnGa/BiSb bilayers. Our results give insight to the role of interfacial DMI tailored by suitable material choice and growth technique for the generation of stable skyrmions at room temperature.
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Research context
OpenAlex topics: Topological Materials and Phenomena · Chemical and Physical Properties of Materials · Magnetic properties of thin films
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology 1 , 2-12-1 Ookayama, Meguro, Tokyo 152-8550, Japan
Department of Physics, Ho Chi Minh City University of Education 2 , 280 An Duong Vuong Street, District 5, Ho Chi Minh City 738242, Vietnam
Center for Spintronics Research Network (CSRN), The University of Tokyo 3 , 7-3-1 Hongo, Bunkyo, Tokyo 113-8656, Japan
CREST, Japan Science and Technology Agency 4 , 4-1-8 Honcho, Kawaguchi, Saitama 332-0012, Japan
Funding
Core Research for Evolutional Science and Technology
References (34)
Show source-provided references
1. Science · 2009 · 323 · 91510.1126/science.1166767 ↗
2. Science · 2008 · 320 · 19010.1126/science.1145799 ↗
3. Appl. Phys. Lett. · 2019 · 114 · 01240210.1063/1.5070101 ↗
4. Appl. Phys. Lett. · 2015 · 106 · 24240410.1063/1.4922726 ↗
5. Science · 2010 · 330 · 164810.1126/science.1195709 ↗
6. Phys. Rev. Lett. · 2004 · 93 · 09680610.1103/physrevlett.93.096806 ↗
7. Phys. Rev. Lett. · 2009 · 102 · 18660210.1103/physrevlett.102.186602 ↗
8. Phys. Rev. Lett. · 2011 · 106 · 15660310.1103/physrevlett.106.156603 ↗
9. Phys. Rev. B · 2014 · 89 · 06441610.1103/physrevb.89.064416 ↗
10. Nat. Commun. · 2015 · 6 · 821710.1038/ncomms9217 ↗
11. Nat. Mater. · 2016 · 15 · 50110.1038/nmat4593 ↗
12. Nat. Nanotechnol. · 2016 · 11 · 44410.1038/nnano.2015.313 ↗
13. Nat. Phys. · 2015 · 11 · 82510.1038/nphys3418 ↗
14. Appl. Phys. Lett. · 2015 · 106 · 05240310.1063/1.4907173 ↗
15. Nat. Nanotechnol. · 2016 · 11 · 44910.1038/nnano.2015.315 ↗
16. Nano Lett. · 2017 · 17 · 270310.1021/acs.nanolett.7b00649 ↗
17. Phys. Rev. B · 2016 · 94 · 02040210.1103/physrevb.94.020402 ↗
18. Science · 2013 · 341 · 63610.1126/science.1240573 ↗
19. Phys. Rev. B · 2014 · 90 · 17441110.1103/physrevb.90.174411 ↗
20. Nat. Commun. · 2015 · 6 · 846210.1038/ncomms9462 ↗
21. Appl. Phys. Lett. · 2017 · 110 · 06240110.1063/1.4975492 ↗
22. Nat. Mater. · 2018 · 17 · 80810.1038/s41563-018-0137-y ↗
23. J. Appl. Phys. · 2017 · 122 · 14390310.1063/1.4999617 ↗
24. Appl. Phys. Lett. · 1993 · 62 · 156510.1063/1.108642 ↗
25. Nat. Nanotechnol. · 2017 · 12 · 104010.1038/nnano.2017.178 ↗
26. Nat. Phys. · 2017 · 13 · 17010.1038/nphys4000 ↗
27. Adv. Mater. · 2016 · 28 · 688710.1002/adma.201600889 ↗
28. Sci. Rep. · 2015 · 5 · 1713710.1038/srep17137 ↗
29. Phys. Rev. B · 2018 · 97 · 06040710.1103/physrevb.97.060407 ↗
30. AIP Adv. · 2014 · 4 · 10713310.1063/1.4899186 ↗
31. Phys. Rev. B · 2017 · 95 · 09441410.1103/physrevb.95.094414 ↗
32. Nat. Nanotechnol. · 2013 · 8 · 89910.1038/nnano.2013.243 ↗
33. Sci. Adv. · 2016 · 2 · e160030410.1126/sciadv.1600304 ↗
34. R. D. Desautels, L. D. Schmitt, S. Montoya, J. A. Borchers, S. G. Je, N. Tang, M. Y. Im, M. R. Fitzsimmons, E. E. Fullerton, and D. A. Gilbert, Phys. Rev. Mater. 3, 104406 (2019).10.1103/PhysRevMaterials.3.10440610.1103/PhysRevMaterials.3.104406 ↗