Identification of fragment ions produced from hexamethyldigermane and the production of low-energy beam of fragment ion possessing Ge-C bond
Source abstract
Abstract
Fragment ions produced from hexamethyldigermane (HMDG) were identified using an ion beam system. The possible chemical formulae for these ions are CH3+, C2H4+, Ge+, GeCHx+, and GeC3Hx+. Among the fragment ions, GeCHx+ ions were mass-selected and irradiated to a Si substrate at room temperature. The ion energy was set at approximately 10 eV. The analyses of the film deposited on the substrate suggested that GeCHx+ ion beam produced from HMDG was useful for germanium-carbon film formation.
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Research context
OpenAlex topics: Semiconductor materials and devices · Ion-surface interactions and analysis · Copper Interconnects and Reliability
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Center for Atomic and Molecular Technologies, Graduate School of Engineering, Osaka University 1 , Suita, Osaka 565-0871, Japan
Department of Chemistry, Nara Women’s University 2 , Kitauoyanishi-machi, Nara, Nara 630-8506, Japan
National Institute of Advanced Industrial Science and Technology (AIST) 3 , Ikeda, Osaka 563-8577, Japan
Funding
Japan Society for the Promotion of Science
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