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journal article·2018-11-01Open access

Localized thinning for strain concentration in suspended germanium membranes and optical method for precise thickness measurement

P. O. Vaccaro, M. I. Alonso, M. Garriga, J. Gutiérrez, D. Peró, M. R. Wagner, J. S. Reparaz, C. M. Sotomayor Torres, X. Vidal, E. A. Carter, P. A. Lay, M. Yoshimoto, A. R. Goñi

AIP Advances· Volume 8· Issue 11
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Source abstract

Abstract

We deposited Ge layers on (001) Si substrates by molecular beam epitaxy and used them to fabricate suspended membranes with high uniaxial tensile strain. We demonstrate a CMOS-compatible fabrication strategy to increase strain concentration and to eliminate the Ge buffer layer near the Ge/Si hetero-interface deposited at low temperature. This is achieved by a two-steps patterning and selective etching process. First, a bridge and neck shape is patterned in the Ge membrane, then the neck is thinned from both top and bottom sides. Uniaxial tensile strain values higher than 3% were measured by Raman scattering in a Ge membrane of 76 nm thickness. For the challenging thickness measurement on micrometer-size membranes suspended far away from the substrate a characterization method based on pump-and-probe reflectivity measurements was applied, using an asynchronous optical sampling technique.
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Research context

OpenAlex topics: Photonic and Optical Devices · Nanowire Synthesis and Applications · Advanced MEMS and NEMS Technologies

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Affiliations

ICREA 1 , Passeig Lluís Companys 23, E-08010 Barcelona, Spain

Institut de Ciència de Materials de Barcelona (ICMAB-CSIC), Esfera UAB 2 , E-08193 Bellaterra, Spain

Department of Physics and Astronomy, Macquarie University 3 , 2109 NSW, Australia

Catalan Institute of Nanoscience and Nanotechnology (ICN2), Campus de la UAB 4 , E-08193 Bellaterra, Spain

Institut für Festkörperphysik, Technische Universität Berlin 5 , Hardenbergstr. 36, 10623 Berlin, Germany

School of Chemistry and Sydney Analytical, University Sydney 6 , Sydney, NSW 2006, Australia

Department of Electronics, Kyoto Institute of Technology 7 , Sakyo, Kyoto 606-8585, Japan

Funding

Agència de Gestió d'Ajuts Universitaris i de Recerca · Ministerio de Economía y Competitividad

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