journal article·2018-05-01Open access

The effect of V/III ratio on the morphology and structure of GaAs nanowires by MOCVD

Yan Liu, Yan Peng, Jingwei Guo, Dongsheng La, Zhaopeng Xu

AIP Advances· Volume 8· Issue 5

Abstract

In this paper, GaAs nanowires with different V/III ratios (70, 140, 280 and 560) were vertically grown from bottom to top on GaAs substrates by using metal organic chemical vapor deposition based on gold assisted vapor-liquid-solid mechanism. It is found that the growth rate of nanowires is inversely proportional to their V/III ratio. And the V/III ratio can also change nanowire growth type. For the nanowire with small V/III ratios (≤280), the reactants are most from those atoms merged in the catalyst. But, for the nanowire with V/III ratio 560, the contribution mainly comes from the diffusions of atoms pyrolyzed on the surface of the nanowire and the substrate. A shrunken neck under the catalyst is observed in TEM characterizations. These results will provide a theoretical basis for potential practical applications of nanowire-based devices.
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Research context

OpenAlex topics: Nanowire Synthesis and Applications · Advancements in Semiconductor Devices and Circuit Design · Semiconductor materials and devices

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

National Engineering Research Center for Equipment and Technology of Cold Strip Rolling, Yanshan University 1 , Qinhuangdao 066004, China

School of Information Science and Engineering, Yanshan University 2 , Qinhuangdao 066004, China

Hebei Key Laboratory of Information Transmission and Signal Processing, Yanshan University 3 , Qinhuangdao 066004, China

School of Computer Science and Engineering, Northeastern University 4 , Shenyang 110819, China

State Key Laboratory of Millimeter Waves, Southeast University 5 , Nanjing 210096, China

Funding

National Natural Science Foundation of China

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