Localization effects in the tunnel barriers of phosphorus-doped silicon quantum dots
Source abstract
Abstract
We have observed a negative differential conductance with singular gate and source-drain bias dependences in a phosphorus-doped silicon quantum dot. Its origin is discussed within the framework of weak localization. By measuring the current-voltage characteristics at different temperatures as well as simulating the tunneling rates dependences on energy, we demonstrate that the presence of shallow energy defects together with an enhancement of localization satisfactory explain our observations. Effects observed in magnetic fields are also discussed.
Source: crossref · Quality: baseline
Research context
OpenAlex topics: Quantum and electron transport phenomena · Semiconductor Quantum Structures and Devices · Advancements in Semiconductor Devices and Circuit Design
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Hitachi Cambridge Laboratory 1 , J J Thomson avenue, CB3 0HE, Cambridge, United Kingdom
Quantum Nanoelectronics Research Centre 2 , Tokyo Institute of Technology, 2-12-1 Ookayama, Meguro-ku, Tokyo, 152-8552 Japan
University of Tokyo 3 Institute for Nano Quantum Information Electronics, , 4-6-1, Komaba, Meguro, Tokyo, Japan
Japan Science and Technology Agency (JST) 4 PRESTO, , Kawaguchi, Saitama 332-0012, Japan
References (26)
Show source-provided references
1. Phys. Rev. · 1958 · 109 · 510.1103/PhysRev.109.1492 ↗
2. Surf. Sci. · 1984 · 142 · 2510.1016/0039-6028(84)90278-4 ↗
3. Physica B · 1982 · 109110 · 310.1016/0378-4363(82)90513-7 ↗
4. Phys. Rev. · 1960 · 120 · 74510.1103/PhysRev.120.745 ↗
5. Phil. Mag. · 1969 · 19 · 83510.1080/14786436908216338 ↗
6. Appl. Phys. Lett. · 2010 · 97 · 1410.1063/1.3499360 ↗
7. Rev. Mod. Phys. · 1968 · 40 · 67710.1103/RevModPhys.40.677 ↗
8. Phil. Mag. · 1969 · 20 · 110.1080/14786436908228532 ↗
9. Phil. Mag. · 1972 · 26 · 101510.1080/14786437208226973 ↗
10. Science · 1999 · 285 · 542810.1126/science.285.5428.715 ↗
11. New J. Phys. · 2011 · 13 · 1010.1088/1367-2630/13/10/103012 ↗
12. Euro. Phys. Jour. B. · 2006 · 54 · 29910.1140/epjb/e2006-00452-x ↗
13. Phys. Rev. B · 2011 · 83 · 07540110.1103/PhysRevB.83.075401 ↗
14. Phys. Rev. Lett. · 2006 · 97 · 20680510.1103/PhysRevLett.97.206805 ↗
15. Phys. Rev. B · 2008 · 77 · 07331010.1103/PhysRevB.77.073310 ↗
16. Nature · 2006 · 442 · 76610.1038/nature05065 ↗
17. Eur. Phys. J. B · 2009 · 70 · 47548110.1140/epjb/e2009-00258-4 ↗
18. J. Phys: Conf. Ser. · 2009 · 150 · 02202610.1088/1742-6596/150/2/022026 ↗
19. Appl. Phys. Lett. · 2011 · 98 · 13350610.1063/1.3573991 ↗
20. Phys. Rev. B · 1995 · 53 · 1667610.1103/PhysRevB.52.16676 ↗
21. Z. Phys. B - Condens. Matter · 1991 · 85 · 37510.1007/BF01307633 ↗
22. Phys. Rev. Lett. · 2007 · 98 · 03680210.1103/PhysRevLett.98.036802 ↗
23. J. Appl. Phys. · 2006 · 100 · 11371410.1063/1.2386934 ↗
24. J. Appl. Phys. · 2006 · 100 · 11371510.1063/1.2386935 ↗
25. Nature Nanotechnology · 2010 · 5 · 13310.1038/nnano.2009.373 ↗
26. Phys. Rev. B · 1991 · 44 · 164610.1103/PhysRevB.44.1646 ↗