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journal article·2020-08-01Open access

Large tunnel magnetoresistance in a fully epitaxial double-barrier magnetic tunnel junction of Fe/MgO/Fe/γ-Al2O3/Nb-doped SrTiO3

Ryota Suzuki, Yuriko Tadano, Masaaki Tanaka, Shinobu Ohya

AIP Advances· Volume 10· Issue 8
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Source abstract

Abstract

We report large tunnel magnetoresistance (TMR) ratios of up to 219% at 300 K and 366% at 3.7 K obtained for a high-quality fully epitaxial double-barrier magnetic tunnel junction (MTJ) composed of Fe/MgO/Fe/γ-Al2O3/Nb-doped SrTiO3. The obtained TMR ratios are among the highest values reported in Fe/MgO/Fe structures. This result may be attributed to the small in-plane wave vectors of the tunneling electrons injected from the Nb-doped SrTiO3 electrode with a small carrier density, demonstrating good compatibility between the Fe-based MTJ and SrTiO3.
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Research context

OpenAlex topics: Electronic and Structural Properties of Oxides · Magnetic and transport properties of perovskites and related materials · Advanced Condensed Matter Physics

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Department of Electrical Engineering and Information Systems, The University of Tokyo 1 , 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan

Center for Spintronics Research Network, Graduate School of Engineering, The University of Tokyo 2 , 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan

Institute of Engineering Innovation, Graduate School of Engineering, The University of Tokyo 3 , 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan

Funding

Spintronics Research Network of Japan · Grants-in-Aid for Scientific Research · Canon Foundation

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