Evaluation of lattice curvature and crystalline homogeneity for 2-inch GaN homo-epitaxial layer
Source abstract
Abstract
We evaluated the lattice curvature, crystallinity, and crystalline homogeneity of a GaN layer on a free standing GaN substrate using lattice orientation measurements, θ rocking curves, and reciprocal space mapping from synchrotron X-ray diffraction topography, and X-ray diffraction. The lattice curvature of the 2-inch GaN homo-epitaxial layer was a concave bend, which had a curvature radius of approximately 20.7 m. The GaN layer was epitaxially grown on the GaN substrate and had good crystallinity with a high homogeneity.
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Research context
OpenAlex topics: GaN-based semiconductor devices and materials · ZnO doping and properties · Ga2O3 and related materials
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Center for GaN Characterization and Analysis, Synchrotron X-Ray Characterization Group, Research Network and Facility Services Division, National Institute for Materials Science (NIMS) 1 , Kouto, Sayo, Hyogo 679-5148, Japan
Synchrotron X-Ray Station at Spring-8, Research Network and Facility Services Division, NIMS 2 , Kouto, Sayo, Hyogo 679-5148, Japan
Synchrotron X-Ray Group, Research Center for Advanced Measurement and Characterization, NIMS 3 , Kouto, Sayo, Hyogo 679-5148, Japan
Funding
National Institutes of Natural Sciences
References (38)
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