journal article·2018-06-01Open access

Composite degradation model and corresponding failure mechanism for mid-power GaN-based white LEDs

Haicheng Cao, Zhanhong Ma, Baojuan Sun, Xuejiao Sun, Chao Yang, Xiaodong Li, Junxi Wang, Lixia Zhao

AIP Advances· Volume 8· Issue 6

Abstract

The degradation mechanism of mid-power GaN-based white LEDs were investigated by using the in-situ multi-functional accelerated aging tests. The changes of the luminous flux and the chromaticity shift during the stress time show some correlations. To quantitatively analyze the degradation behavior, a composite model considering the luminous flux increasing and decreasing mechanisms was proposed and the results agree well with the experiments in the entire aging time. Furthermore, different analytical technologies have been used to understand the cause of luminous flux degradation and chromaticity shift. The results show that the chromaticity shift was mainly due to the phosphors deterioration, while the serious degradation of luminous flux was the overall effects from the package, including the phosphors deterioration and oxidation of silicone encapsulant.
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Research context

OpenAlex topics: GaN-based semiconductor devices and materials · ZnO doping and properties · Ga2O3 and related materials

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Semiconductor Lighting Research and Development Center, Institute of Semiconductors, Chinese Academy of Sciences 1 , Beijing 100083, P. R. China

College of Materials Sciences and Opto-Electronic Technology, University of Chinese Academy of Sciences 2 , Beijing 100049, P. R. China

Funding

National Basic Research and High Technology Program of China · National Natural Science Foundation of China

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