journal article·2018-05-01Open access

Temperature-induced band shift in bulk γ-InSe by angle-resolved photoemission spectroscopy

Huanfeng Xu, Wei Wang, Yafei Zhao, Xiaoqian Zhang, Yue Feng, Jian Tu, Chenyi Gu, Yizhe Sun, Chang Liu, Yuefeng Nie, Ion C. Edmond Turcu, Yongbing Xu, Liang He

AIP Advances· Volume 8· Issue 5

Abstract

Indium selenide (InSe) has recently become popular research topics because of its unique layered crystal structure, direct band gap and high electron mobilities. In this work, we have acquired the electronic structure of bulk γ-InSe at various temperatures using angle-resolved photoemission spectroscopy (ARPES). We have also found that as the temperature decreases, the valence bands of γ-InSe exhibit a monotonic shift to lower binding energies. This band shift is attributed to the change of lattice parameters and has been validated by variable temperature X-ray diffraction measurements and theoretical calculations.
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Research context

OpenAlex topics: Chalcogenide Semiconductor Thin Films · Solid-state spectroscopy and crystallography · 2D Materials and Applications

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Affiliations

National Laboratory of Solid State Microstructures, School of Electronic Science and Engineering and Collaborative Innovation Center of Advanced Microstructures, Nanjing University 1 , Nanjing 210093, China

Department of Physics, Southern University of Science and Technology (SUSTech) 2 , Shenzhen, Guangdong 518055, China

National Laboratory of Solid State Microstructures, College of Engineering and Applied Sciences, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University 3 , Nanjing 210093, China

Funding

Jiangsu Shuangchuang Program and the Natural Science Foundation of Jiangsu Province of China · National Basic Research Program of China · National Key Research and Development Program of China · National Natural Science Foundation of China

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