Tuning the charge states in InAs/GaSb or InAs/GaInSb composite quantum wells by persistent photoconductivity
Source abstract
Abstract
We have experimentally studied the persistent photoconductivity (PPC) in inverted InAs/GaSb and InAs/GaInSb quantum wells, which can be tuned into a bulk-insulating state by electron-hole hybridization. Specifically we tune the bulk band structure and carriers with light-emitting diode (LED) illuminations. The persistent photoconductivity could be negative or positive, depending on the specific doping structure and the illuminating photon energy. Compared to the widely-used electro-statically gating method, our findings provide a more flexible and non-invasive way to control the band structures and charge states in InAs/GaSb and InAs/GaInSb quantum wells (QWs).
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Research context
OpenAlex topics: Advanced Semiconductor Detectors and Materials · Topological Materials and Phenomena · Semiconductor Quantum Structures and Devices
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
International Center for Quantum Materials, School of Physics, Peking University 1 , Beijing 100871, P. R. China
Department of Physics and Astronomy, Rice University 3 , Houston, Texas 77251-1892, USA
Collaborative Innovation Center of Quantum Matter 2 , Beijing 100871, P. R. China
Teledyne Scientific and Imaging 4 , Thousand Oaks, California 910603, USA
Funding
Collaborative Innovation Center for Quantum Matters · National Science Foundation · National Natural Science Foundation of China · Welch Foundation
References (21)
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