Growth of InN hexagonal microdisks

InN hexagonal thin wurtzite disks were grown on γ-LiAlO2 by plasma-assisted molecular-beam epitaxy at low temperature (470oC). The (0001¯) InN thin disk was established with the capture of N atoms by the β¯-dangling bonds of most-outside In atoms, and then the lateral over-growth of the In atoms were caught by the β¯-dangling bonds of the N atoms. From the analyses of high-resolution transmission electron microscopy, the lateral over-grown width was extended to three unit cells at [11¯00]InN direction for a unit step-layer, resulting in an oblique surface with 73o off c-axis.