Overshoot effects of electron on efficiency droop in InGaN/GaN MQW light-emitting diodes
Source abstract
Abstract
To evaluate electron leakage in InGaN/GaN multiple quantum well (MQW) light emitting diodes (LEDs), analytic models of ballistic and quasi-ballistic transport are developed. With this model, the impact of critical variables effecting electron leakage, including the electron blocking layer (EBL), structure of multiple quantum wells (MQWs), polarization field, and temperature are explored. The simulated results based on this model shed light on previously reported experimental observations and provide basic criteria for suppressing electron leakage, advancing the design of InGaN/GaN LEDs.
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Research context
OpenAlex topics: GaN-based semiconductor devices and materials · Semiconductor Quantum Structures and Devices · ZnO doping and properties
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Chinese Academy of Sciences 1 R&D Center for Semiconductor Lighting, , Beijing 100083, P. R. China
State Key Laboratory of Solid State Lighting 2 , Beijing 100083, P. R. China
Beijing Engineering Research Center for the 3rd Generation Semiconductor Materials and Application 3 , Beijing 100083, P. R. China
Funding
National Natural Science Foundation of China
References (30)
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