Investigation to the deep center related properties of low temperature grown InPBi with Hall and photoluminescence

Peng Wang; Wenwu Pan; Kai Wang; Xiaoyan Wu; Li Yue; Qian Gong; Shumin Wang

doi:10.1063/1.4937412

journal article·2015-12-01Open access

Investigation to the deep center related properties of low temperature grown InPBi with Hall and photoluminescence

Peng Wang, Wenwu Pan, Kai Wang, Xiaoyan Wu, Li Yue, Qian Gong, Shumin Wang

AIP Advances· Volume 5· Issue 12

Publisher page Open full text

Source abstract

Abstract

InP1-xBix epilayers with bismuth (Bi) concentration x= 1.0% were grown on InP by gas source molecular beam epitaxy (GS-MBE) at low temperature (LT). Bi incorporation decreased the intrinsic free electron concentration of low temperature grown InP indicated by hall analysis. It is concluded that deep level center was introduced by Bi. Influence of Si doping on the InP1-xBix films Photoluminescence (PL) was investigated. N-type doping in the InP1-xBix epilayers was found to be effective at PL enhancement. Blue shift of InPBi PL emission wavelength was observed as the Si doping concentration increasing. Two independent peaks were fitted and their temperature dependence behavior was observed to be distinct obviously. Two individual radiative recombination processes were expected to be involved.

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Research context

OpenAlex topics: Semiconductor Quantum Structures and Devices · Semiconductor Lasers and Optical Devices · Photonic and Optical Devices

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Science 1 State Key Laboratory of Functional Materials for Informatics, , Shanghai 200050, China

University of Chinese Academy of Sciences 2 School of Physics, , 19 Yuquan Road, Beijing, 100049, China

National Laboratory for Infrared Physics, Chinese Academy of Sciences 3 , 500 Yutian Road, Shanghai, 200083, China

Chalmers University of Technology 4 Department of Microtechnology and Nanoscience, , 41296 Gothenburg, Sweden

Funding

"strategic priority research program" of the Chinese academy of sciences · creative research group project of natural science foundation of China · key program of natural science foundation of china · national basic research program of china · the foundation of national laboratory for infrared physics, the key research program of the chinese academy of sciences

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