Study of variations of the carrier recombination and charge transport parameters during proton irradiation of silicon pin diode structures
Source abstract
Abstract
Techniques for the remote and in situ control of carrier recombination and drift parameters during proton irradiation are presented. The measurement and evaluation of the carrier recombination and drift-diffusion characteristics are based on simultaneous analysis of microwave probed photoconductivity transients and of the induced charge collection current transients in diodes with applied electric field during the proton exposure.
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Research context
OpenAlex topics: Silicon and Solar Cell Technologies · Integrated Circuits and Semiconductor Failure Analysis · Particle Detector Development and Performance
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Affiliations
Vilnius University 1 Institute of Applied Research, , Lithuania
University of Helsinki 2 Division of Materials Physics, Department of Physics, , Finland
References (16)
Show source-provided references
1. Appl. Phys. Lett. · 2003 · 82 · 216910.1063/1.1564869 ↗
2. Phys. Rev. B · 2007 · 75 · 15520210.1103/PhysRevB.75.155202 ↗
3. IEEE Trans. Nucl. Sci · 2006 · 53 · 58910.1109/TNS.2006.873216 ↗
4. Nucl. Instrum. Meth. Phys. Res. A · 1996 · 372 · 38810.1016/0168-9002(95)01295-8 ↗
5. Nucl. Instrum. Meth. Phys. Res. A · 2007 · 581 · 34710.1016/j.nima.2007.08.001 ↗
6. Nucl. Instrum. Meth. Phys. Res. A · 2002 · 491 · 19410.1016/S0168-9002(02)01227-5 ↗
7. Review Sci. Instrum. · 2010 · 81 · 05330310.1063/1.3429944 ↗
8. J. Appl. Phys. · 2009 · 106 · 02490810.1063/1.3168436 ↗
9. Journ. Appl. Phys. · 1998 · 84 · 483410.1063/1.368725 ↗
10. J. Appl. Phys. · 2009 · 106 · 10491410.1063/1.3262611 ↗
11. 1992
12. 1995
13. 1970
14. Nucl. Insrum. Meth. Phys. Res. A · 1999 · 426 · 9910.1016/S0168-9002(98)01478-8 ↗
15. Nucl. Instr. Methods in Phys. Res. A · 2009 · 607 · 9210.1016/j.nima.2009.03.136 ↗
16. 1982