Controlled growth and magnetic property of a-plane-oriented Mn3Sn thin films
Source abstract
Abstract
Highly a-plane-oriented Mn3Sn thin films were grown on m-plane sapphire substrates with low-temperature grown Mn3+xSn buffer layers by sputtering deposition technique, and their crystallinity and magnetic properties were investigated by X-ray diffraction and SQUID magnetometer, respectively. The crystallographic orientations of Mn3Sn domains are found to be sensitively influenced by substrate temperature, thickness and composition ratio of Mn3+αSn buffer layer. The highly a-plane-oriented Mn3Sn film shows slightly different magnetization behavior from randomly oriented Mn3Sn film, while the saturation magnetization Ms and coercivity of the highly a-plane-oriented Mn3Sn film are corresponding to that of single crystal bulk.
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Research context
OpenAlex topics: Heusler alloys: electronic and magnetic properties · ZnO doping and properties · Magnetic and transport properties of perovskites and related materials
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Future Technology Research Laboratory, ULVAC, Inc. 1 , Tsukuba 300-2635, Japan
Department of Applied Physics, Tohoku University 2 , Sendai 980-8579, Japan
Department of Electronic Engineering, Tohoku University 3 , Sendai 980-8579, Japan
Center for Spintronics Research Network, Tohoku University 4 , Sendai 980-8577, Japan
Center for Science and Innovation in Spintronics (Core Research Cluster), Organization for Advanced Studies, Tohoku University 5 , Sendai 980-8577, Japan
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