Changes in output parameters of 1 MeV electron irradiated upright metamorphic GaInP/GaInAs/Ge triple junction solar cell
Source abstract
Abstract
The changes in output parameters of 1 MeV electron irradiated MOCVD grown upright metamorphic (UMM) GaInP/GaInAs/Ge triple junction solar cells have been studied. Non-ionizing energy loss (NIEL) approach and MULASSIS simulation were applied for analyzing the effects of irradiation induced displacement damage on cell performance. The influence of base thickness on radiation resistance has been studied by changing the base thickness of top GaInP and middle GaInAs subcell, respectively. The experimental results show that the electrical parameters, Voc, Isc, and Pmax of UMM cell degrade with the increase of electron fluence. The change of spectra response indicates middle GaInAs subcell degrades more severe than top GaInP subcells, and the base thickness of two subcells has different effects on spectra response of UMM cell.
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Research context
OpenAlex topics: solar cell performance optimization · Chalcogenide Semiconductor Thin Films · Semiconductor Quantum Structures and Devices
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Key Laboratory of Functional Materials and Device for Special Environments, Xinjiang Technical Institute of Phys. & Chem., Chinese Academy of Sciences 1 , No. 40-1 South Beijing Road, Urumqi 830011, P. R. China
University of Chinese Academy of Sciences 2 , No. 19-A Yuquan Road, Shijingshan District, Beijing 100049, P. R. China
National Key Laboratory of Materials Behavior and Evaluation Technology in Space Environment, Harbin Institute of Technology 3 , No. 92 West Nangang Road, Harbin 150001, P. R. China
Funding
1000-Talent-Project of Xinjiang Technical Institute of Phys. & Chem. CAS · Director Foundation of Xinjiang Technical Institute of Phys. & Chem., CAS · Western Light Foundation of Chinese Academy of Sciences · National Natural Science Foundation of China
References (30)
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