Doping-induced states near the Mott transition in the presence of antiferromagnetic order

A central issue of the Mott transition is how electronic states change in the Mott transition. Here, by taking into account spin fluctuation around the mean-field state using the random-phase approximation, electronic states exhibiting the spin-wave dispersion relation shifted by the Fermi momenta are shown to emerge in the Mott gap on doping an antiferromagnetically ordered Mott insulator. This characteristic contrasts with that of the mean-field approximation where doping does not induce electronic states in the gap. The results imply that this characteristic is general and fundamental to the Mott transition even in the presence of antiferromagnetic order.