Properties of GaN-based nanopillar-shaped crystals grown on a multicrystalline Si substrate
Source abstract
Abstract
The growth of gallium nitride-based nanopillar-shaped crystals on the multicrystalline silicon substrate that is widely employed in solar cells is presented here for the first time. The nanopillar-shaped crystals are successfully grown on the multicrystalline substrate in a manner similar to the structures grown on other substrates. Structural variations and a highly enhanced band edge emission in the photoluminescence spectrum have been observed using germanium doping.
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Research context
OpenAlex topics: GaN-based semiconductor devices and materials · Nanowire Synthesis and Applications · Semiconductor Quantum Structures and Devices
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Department of Mathematical Science and Electrical-Electronic-Computer Engineering, Graduate School of Engineering Science, Akita University , 1-1 Tegata-gakuen, Akita 010-8502, Japan
Funding
MEXT | Japan Society for the Promotion of Science
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