Investigation of writing error in staggered heated-dot magnetic recording systems
Source abstract
Abstract
To achieve an ultra-high storage capacity, heated-dot magnetic recording (HDMR) has been proposed, which heats a bit-patterned medium before recording data. Generally, an error during the HDMR writing process comes from several sources; however, we only investigate the effects of staggered island arrangement, island size fluctuation caused by imperfect fabrication, and main pole position fluctuation. Simulation results demonstrate that a writing error can be minimized by using a staggered array (hexagonal lattice) instead of a square array. Under the effect of main pole position fluctuation, the writing error is higher than the system without main pole position fluctuation. Finally, we found that the error percentage can drop below 10% when the island size is 8.5 nm and the standard deviation of the island size is 1 nm in the absence of main pole jitter.
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Research context
OpenAlex topics: Magnetic properties of thin films · Characterization and Applications of Magnetic Nanoparticles · Semiconductor materials and devices
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
KMITL 1 College of Advanced Manufacturing Innovation, , Bangkok 10520, Thailand
Teparuk 2 Seagate Technology (Thailand), , Mueang, Samutprakarn 10270 Thailand
Seagate Technology US NRM Facility 3 , Bloomington, Minnesota 55435, USA
NPRU 4 Data Storage Technology Research Center, , Nakhon, Pathom 73000, Thailand
Funding
Thailand Research Fund · King Mongkut's Institute of Technology Ladkrabang
References (31)
Show source-provided references
1. Appl. Phys. Lett. · 2016 · 108 · 10240610.1063/1.4943629 ↗
2. J. Appl. Phys. · 2016 · 119 · 22390310.1063/1.4953390 ↗
3. Proc. Jpn. Acad. Ser. B Phys. Biol. Sci. · 2009 · 85 · 3710.2183/pjab.85.37 ↗
4. Proc. IEEE · 2008 · 96 · 181010.1109/jproc.2008.2004315 ↗
5. Nat. Photon. · 2009 · 3 · 18910.1038/nphoton.2009.40 ↗
6. Nat. Photon. · 2009 · 3 · 22010.1038/nphoton.2009.26 ↗
7. Appl. Phys. Lett. · 2016 · 108 · 23240210.1063/1.4953231 ↗
8. IEEE Trans. Magn. · 2008 · 44 · 12510.1109/tmag.2007.911031 ↗
9. IEEE Trans. Magn. · 2010 · 46 · 75110.1109/tmag.2009.2036588 ↗
10. J. Appl. Phys. · 2014 · 115 · 21431210.1063/1.4882063 ↗
11. J. Phys. D: Appl. Phys. · 2015 · 48 · 35300110.1143/apex.5.093005 ↗
12. J. Magn. Magn. Matter. · 2016 · 416 · 18810.1016/j.jmmm.2016.04.084 ↗
13. Recent Pat. Nanotech. · 2007 · 1 · 2910.2174/187221007779814754 ↗
14. J. Phys. D: Appl. Phys. · 2013 · 46 · 50300110.1088/0022-3727/46/50/503001 ↗
15. AIP Adv. · 2015 · 5 · 08716510.1063/1.4929578 ↗
16. Nano Lett. · 2016 · 16 · 472610.1021/acs.nanolett.6b02345 ↗
17. AIP Adv. · 2016 · 6 · 05611410.1063/1.4943605 ↗
18. IEEE Trans. Magn. · 2013 · 49 · 69310.1109/tmag.2012.2226566 ↗
19. J. Appl. Phys. · 2002 · 91 · 659510.1063/1.1470254 ↗
20. Adv. Mater. Sci. Eng. · 2015 · 50462810.1155/2015/504628 ↗
21. J. Appl. Phys. · 2012 · 111 · 07391010.1063/1.3702876 ↗
22. Jpn. J. Appl. Phys. · 2016 · 55 · 07MB0110.7567/jjap.55.07mb01 ↗
23. J. Magn. Magn. Mater. · 2012 · 324 · 30910.1016/j.jmmm.2010.11.082 ↗
24. J. Appl. Phys. · 2007 · 101 · 09H50110.1063/1.2710546 ↗
25. J. Appl. Phys. · 2012 · 111 · 07B70110.1063/1.3671421 ↗
26. IEEE Magn. Lett. · 2016 · 7 · 450540410.1109/lmag.2016.2594167 ↗
27. J. Appl. Phys. · 2012 · 111 · 07B72710.1063/1.3680535 ↗
28. IEEE Trans. Magn. · 2012 · 48 · 458610.1109/tmag.2012.2194988 ↗
29. IEEE Trans. Magn. · 2014 · 50 · 320040510.1109/tmag.2013.2280018 ↗
30. J. Appl. Phys. · 2015 · 117 · 17A90410.1063/1.4913894 ↗
31. IEEE Trans. Magn. · 2005 · 41 · 321410.1109/tmag.2005.854780 ↗