Optimizing the active region of interband cascade lasers for passive mode-locking
Source abstract
Abstract
The work proposes possible designs of active regions for a mode-locked interband cascade laser emitting in the mid infrared. For that purpose we investigated the electronic structure properties of respectively modified GaSb-based type II W-shaped quantum wells, including the effect of external bias in order to simultaneously fulfil the requirements for both the absorber as well as the gain sections of a device. The results show that introducing multiple InAs layers in type II InAs/GaInSb quantum wells or introducing a tensely-strained GaAsSb layer into “W-shaped” type II QWs offers significant difference in optical transitions’ oscillator strengths (characteristic lifetimes) of the two oppositely polarized parts of such a laser, being promising for utilization in mode-locked devices.
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Research context
OpenAlex topics: Advanced Fiber Laser Technologies · Spectroscopy and Laser Applications · Solid State Laser Technologies
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Wrocław University of Science and Technology 1 Laboratory for Optical Spectroscopy of Nanostructures, Department of Experimental Physics, Faculty of Fundamental Problems of Technology, , Wybrzez˙e Wyspiańskiego 27, 50-370 Wrocław, Poland
University of Würzburg and Wilhelm Conrad Röntgen Research Center for Complex Material Systems 2 Technische Physik, , Am Hubland, D−97074 Würzburg, Germany
University of St. Andrews 3 SUPA, School of Physics and Astronomy, , North Haugh, St. Andrews KY16 9SS, United Kingdom
Funding
European Commission
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