Time-resolved ultraviolet photoluminescence of ZnO/ZnGa2O4 composite layer
Source abstract
Abstract
The ultraviolet photoluminescence of ZnO/ZnGa2O4 composite layer grown by the thermal oxidation of ZnS with gallium was investigated by the time-resolved photoluminescence as a function of measuring temperature and excitation power. With increase of excitation power, the D0X emission is easily saturated than the DAP emission from ZnO/ZnGa2O4 composite layer, and which is dramatically enhanced as compared with that from pure ZnO layer grown without gallium. The radiative recombination process with ultra-long lifetime controlled the carrier recombination of ZnO/ZnGa2O4 composite layer.
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Research context
OpenAlex topics: ZnO doping and properties · Ga2O3 and related materials · Luminescence Properties of Advanced Materials
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Xi'an University of Technology 1 Faculty of Material Science and Engineering, , Xi'an 710048, China
Waseda University 2 Department of Applied physics, , Tokyo 169-8555, Japan
Shizuoka University 3 Graduate School of Engineering, , Hamamatsu 432-8561, Japan
Funding
NNSFC
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