journal article·2020-08-01Open access

C2v and D3h symmetric InAs quantum dots on GaAs (001) substrate: Exciton emission and a defect field influence

Xiangjun Shang, Ben Ma, Haiqiao Ni, Zesheng Chen, Shulun Li, Yao Chen, Xiaowu He, Xingliang Su, Yujun Shi, Zhichuan Niu

AIP Advances· Volume 10· Issue 8

Abstract

InAs/GaAs quantum dots (QDs) grown on a GaAs (001) substrate were studied by photoluminescence spectroscopy. Both C2v and D3h QDs with featured XX11, X11+, and XX21+ spectra have been found. A local defect field tunes the dominant exciton from X+ to X or X−, enhances the population on XX, XXX, and XXX−, and induces tunneling and spectral diffusion. In D3h QDs, it also induces a prior e1–h2 transition and a structural polarization of XX21+ and XX11 to build a direct cascade XX21+ − X+. Both XX21+ − X+ and XX − X have no fine structure splitting, promising for entangled photon pair emission. A dominant X+ with slow electron capture (due to background holes) proves a pure single-photon emission.
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Research context

OpenAlex topics: Semiconductor Quantum Structures and Devices · Quantum Dots Synthesis And Properties · Semiconductor Lasers and Optical Devices

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences 1 , Beijing 100083, China

Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences 2 , Beijing 100049, China

Laboratory of Solid Quantum Material Center, College of Physics and Electronic Engineering, Shanxi University 3 , Taiyuan 030006, China

Beijing Academy of Quantum Information Sciences 4 , Beijing 100193, China

Funding

National Key Technologies R&D Program of China · The Key R&D Program of Guangdong Province · The Scientific Instrument Developing Project of Chinese Academy of Sciences · National Natural Science Foundation of China

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