Strong correlation between B-Al-N doping concentration fluctuation and photoluminescence effects of f-SiC
Source abstract
Abstract
This paper report the relationship between B-Al-N doping concentration fluctuation and photoluminescence effects of fluorescent 4H-SiC single crystals. The photoluminescence emission properties, dopant concentration, and internal quantum efficiency of B, Al and N co-doped 4H-SiC are characterized. It is found that the emission spectra exhibit a wide band that covers from about 450 nm to 750 nm. The peak intensity of the emission spectra is strongly affected by B, Al and N concentrations. By further analyses the roles of B-Al-N dopants, a hypothetical formula is proposed, which can help to profile the strong correlation between photoluminescence effects and B-Al-N doping concentrations.
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Research context
OpenAlex topics: Semiconductor materials and devices · ZnO doping and properties · Silicon Carbide Semiconductor Technologies
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Shanghai Institute of Ceramics, Chinese Academy of Sciences 1 , Shanghai 201899, People’s Republic of China
University of Chinese Academy of Sciences 2 , Beijing 100049, People’s Republic of China
Funding
National key Research and Development Program of China · National Key Research and Development Program of China · Shanghai Science and Technology Innovation Action Plan Program · The Young Scientists Fund of the National Nature Science Foundation of China
References (23)
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