journal article·2017-08-01Open access

Thermal annealing studies of GeTe-Sb2Te3 alloys with multiple interfaces

Valeria Bragaglia, Antonio M. Mio, Raffaella Calarco

AIP Advances· Volume 7· Issue 8

Abstract

A high degree of vacancy ordering is obtained by annealing amorphous GeTe-Sb2Te3 (GST) alloys deposited on a crystalline substrate, which acts as a template for the crystallization. Under annealing the material evolves from amorphous to disordered rocksalt, to ordered rocksalt with vacancies arranged into (111) oriented layers, and finally converts into the stable trigonal phase. The role of the interface in respect to the formation of an ordered crystalline phase is studied by comparing the transformation stages of crystalline GST with and without a capping layer. The capping layer offers another crystallization interface, which harms the overall crystalline quality.
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Research context

OpenAlex topics: Phase-change materials and chalcogenides · Chalcogenide Semiconductor Thin Films · Nonlinear Optical Materials Studies

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Affiliations

Paul-Drude-Institut für Festkörperelektronik 1 , Hausvogteiplatz 5-7, 10117 Berlin, Germany

Institute for Microelectronics and Microsystems (IMM), Consiglio Nazionale delle Ricerche (CNR) 2 , VIII Strada, 5-95121 Catania, Italy

Physikalisches Institut (IA), RWTH Aachen University 3 , Sommerfeldstraße 14, 52074 Aachen, Germany

Funding

FP7 Ideas: European Research Council

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