Thermal annealing studies of GeTe-Sb2Te3 alloys with multiple interfaces
Source abstract
Abstract
A high degree of vacancy ordering is obtained by annealing amorphous GeTe-Sb2Te3 (GST) alloys deposited on a crystalline substrate, which acts as a template for the crystallization. Under annealing the material evolves from amorphous to disordered rocksalt, to ordered rocksalt with vacancies arranged into (111) oriented layers, and finally converts into the stable trigonal phase. The role of the interface in respect to the formation of an ordered crystalline phase is studied by comparing the transformation stages of crystalline GST with and without a capping layer. The capping layer offers another crystallization interface, which harms the overall crystalline quality.
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Research context
OpenAlex topics: Phase-change materials and chalcogenides · Chalcogenide Semiconductor Thin Films · Nonlinear Optical Materials Studies
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Paul-Drude-Institut für Festkörperelektronik 1 , Hausvogteiplatz 5-7, 10117 Berlin, Germany
Institute for Microelectronics and Microsystems (IMM), Consiglio Nazionale delle Ricerche (CNR) 2 , VIII Strada, 5-95121 Catania, Italy
Physikalisches Institut (IA), RWTH Aachen University 3 , Sommerfeldstraße 14, 52074 Aachen, Germany
Funding
FP7 Ideas: European Research Council
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