journal article·2016-06-01Open access

Investigation of structural, electronic, elastic and optical properties of Cd1-x-yZnxHgyTe alloys

M. Tamer

AIP Advances· Volume 6· Issue 6

Abstract

Structural, optical and electronic properties and elastic constants of Cd1-x-yZnx HgyTe alloys have been studied by employing the commercial code Castep based on density functional theory. The generalized gradient approximation and local density approximation were utilized as exchange correlation. Using elastic constants for compounds, bulk modulus, band gap, Fermi energy and Kramers–Kronig relations, dielectric constants and the refractive index have been found through calculations. Apart from these, X-ray measurements revealed elastic constants and Vegard’s law. It is seen that results obtained from theory and experiments are all in agreement.
Source: crossref · Quality: baseline

Research context

OpenAlex topics: Advanced Semiconductor Detectors and Materials · Chalcogenide Semiconductor Thin Films · High-pressure geophysics and materials

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Zirve University Faculty of Education , 27260, Gaziantep, Turkey

References (48)

Show source-provided references
1. Chem. Rev. · 2002 · 102 · 192910.1021/cr010319h ↗
2. J. Am. Chem. Soc. · 2003 · 125 · 704910.1021/ja0343611 ↗
3. 1987 · 59
4. Science · 2000 · 287 · 102410.1126/science.287.5455.1024 ↗
5. Statistical model of sphalerite structured quaternary A1-xBxY yZ1-y systems10.1016/j.jallcom.2006.02.012 ↗
6. 1982
7. Spatial Uniformity of Minority-Carrier Lifetime in Polycrystalline CdTe Solar Cells10.1063/1.111402 ↗
8. Growth and Characterization of HgCdTe Heterostructures by Metalorganic Molecular Beam Epitaxy10.1016/0022-0248(95)00846-2 ↗
9. Proc. of. Proc.SPIE Int.Soc.Opt.Eng. · 3446 · 2
10. J. Crystal Growth · 2002 · 237–239 · 208210.1016/S0022-0248(01)02314-4 ↗
11. Mater. Sci. Eng. · 2001 · 32 · 10310.1016/S0927-796X(01)00027-4 ↗
12. J. Electron. Mater. · 1999 · 28 · 86410.1007/s11664-999-0085-z ↗
13. J. Crystal Growth · 1996 · 161 · 15310.1016/0022-0248(95)00626-5 ↗
14. IEEE Trans. Nucl. Sci. · 2004 · 51 · 186410.1109/TNS.2004.832958 ↗
15. Schlesinger · 1995
16. J. Crystal Growth · 1996 · 161 · 2010.1016/0022-0248(95)00606-0 ↗
17. Appl. Phys. Lett. · 1991 · 58 · 265110.1063/1.104797 ↗
18. 2004
19. Semicond. Sci. Technol. · 1993 · 8 · 75310.1088/0268-1242/8/6S/001 ↗
20. Chin. Phys. B · 2012 · 21 · 03610210.1088/1674-1056/21/3/036102 ↗
21. J. Phys.: Condens. Matter · 2002 · 14 · 271710.1088/0953-8984/14/11/301 ↗
22. J. Phys. Chem. · 1992 · 96 · 976810.1021/j100203a036 ↗
23. Special points for Brillouin-zone integrations10.1103/PhysRevB.13.5188 ↗
24. Phys. Status Solidi C · 2006 · 3 · 186610.1002/pssc.200565280 ↗
25. Solid State Communications · 2003 · 127 · 41110.1016/S0038-1098(03)00457-5 ↗
26. 1976
27. 1957
28. 1956
29. Phys. Rev. B · 2007 · 76 · 05411510.1103/PhysRevB.76.054115 ↗
30. Materials Transactions · 2012 · 53 · 124710.2320/matertrans.M2011373 ↗
31. Int., J.Physical Sciences · 2010 · 5 · 2212
32. Phys. Review B · 2012 · 85 · 14411710.1103/PhysRevB.85.144117 ↗
33. A DFT study of BeX (X = S, Se, Te) semiconductor: modified Becke Johnson (mBJ) potential
34. J. Sound and Vibrations · 2008 · 312 · 57210.1016/j.jsv.2008.01.026 ↗
35. Phys. Status Solidi, Rapid Res. Lett. · 2007 · 3 · 8910.1002/pssr.200600116 ↗
36. Frantsevich · 1983
37. J. Appl. Phys. · 2008 · 103 · 07411310.1063/1.2902433 ↗
38. Deformation potentials in silicon, 1. uniaxial strain10.1103/PhysRev.128.2614 ↗
39. Acta Physica Polonica A · 1995 · 88
40. 1988 · 217
41. 1996 · 45
42. 1973 · 102
43. 2001
44. Phys. Rev. B · 2006 · 73 · 19510210.1103/PhysRevB.73.195102 ↗
45. 1972
46. Physica B · 2008 · 403 · 190710.1016/j.physb.2007.10.370 ↗
47. Comput. Mater. Sci. · 2006 · 38 · 2910.1016/j.commatsci.2006.01.013 ↗
48. First Principles Calculations of the Electronic and Optical Properties in CdxZnl−xSe Ternary Alloys