Investigation of Emission Heterogeneity in InGaN/GaN Micro-Light-Emitting Diodes by Photon-Correlation Cathodoluminescence Spectroscopy
Source abstract
Abstract
The emission properties of InGaN/GaN μ-light-emitting diodes (LEDs) of different sizes and shapes were investigated by spectrally resolved and time-correlated cathodoluminescence spectroscopy. This approach provides high spatial and temporal resolution, allowing us to simultaneously measure CL spectra and carrier lifetimes at the single μ-LED level. It also enables us to investigate the correlation between these parameters within individual μ-LEDs and across multiple devices. Our observations show a large variation in CL intensity between similarly sized μ-LEDs, particularly in the smallest samples. This variation correlates with changes in the emission wavelength and has been attributed to differences in injection efficiency between samples caused by V-pit type defects in the active region.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: GaN-based semiconductor devices and materials · Semiconductor Quantum Structures and Devices · Semiconductor materials and devices
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Univ. Grenoble Alpes, CNRS, Grenoble INP, Institut Néel, 38000 Grenoble, France
Univ. Grenoble Alpes, CEA-LETI, Grenoble INP, 38000 Grenoble, France
Funding
Agence Nationale de la Recherche · Centre National de la Recherche Scientifique · Plateforme Technologique Amont
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