Ferromagnetism in undoped One-dimensional GaN Nanowires
Source abstract
Abstract
We report an intrinsic ferromagnetism in vertical aligned GaN nanowires (NW) fabricated by molecular beam epitaxy without any external catalyst. The magnetization saturates at ∼0.75 × emu/gm with the applied field of 3000 Oe for the NWs grown under the low-Gallium flux of 2.4 × 10−8 mbar. Despite a drop in saturation magnetization, narrow hysteresis loop remains intact regardless of Gallium flux. Magnetization in vertical standing GaN NWs is consistent with the spectral analysis of low-temperature photoluminescence pertaining to Ga-vacancies associated structural defects at the nanoscale.
Source: crossref · Quality: baseline
Research context
OpenAlex topics: ZnO doping and properties · GaN-based semiconductor devices and materials · Ga2O3 and related materials
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Bharathidasan University 1 Centre for Nanoscience and Nanotechnology, School of Physics, , Tiruchirappalli - 620 024, India
University of Toronto 2 Department of Electrical and Computer Engineering, , 10 King's College Road, Toronto, Ontario M5S 3G4, Canada
Bharathidasan University 3 Centre for High Pressure Research, School of Physics, , Tiruchirappalli – 620 024, India
References (37)
Show source-provided references
1. Phys. Rev. Lett. · 1989 · 63 · 184910.1103/PhysRevLett.63.1849 ↗
2. Science · 2000 · 287 · 101910.1126/science.287.5455.1019 ↗
3. Nature Mater. · 2003 · 2 · 67310.1038/nmat984 ↗
4. J. Appl. Phys. Lett. · 2005 · 86 · 03250610.1063/1.1852725 ↗
5. Adv. Mater. · 2005 · 17 · 135110.1002/adma.200401706 ↗
6. Nano Lett. · 2007 · 7 · 336610.1021/nl0716552 ↗
7. Phys. Rev. Lett. · 2003 · 90 · 01740110.1103/PhysRevLett.90.017401 ↗
8. Acta Physica Polonica A. · 2007 · 111 · 2710.12693/APhysPolA.111.27 ↗
9. Appl. Phys. Lett. · 2013 · 103 · 02240210.1063/1.4813217 ↗
10. Adv. Mater. · 2010 · 22 · 312510.1002/adma.200903891 ↗
11. AIP Advances · 2011 · 1 · 02215210.1063/1.3609964 ↗
12. Appl. Phys. Lett. · 2010 · 96 · 11251110.1063/1.3340930 ↗
13. Phys. Rev. B · 2008 · 77 · 20130610.1103/PhysRevB.77.201306 ↗
14. Appl. Phys. Lett. · 2009 · 94 · 16250510.1063/1.3123169 ↗
15. Phys. Rev. B. · 2007 · 76 · 24520510.1103/PhysRevB.76.245205 ↗
16. Phys. Rev. Lett. · 2006 · 96 · 19640210.1103/PhysRevLett.96.196402 ↗
17. Nature Commun. · 2010 · 1 · 5810.1038/ncomms1056 ↗
18. Phys. Rev. Lett. · 2008 · 100 · 11720410.1103/PhysRevLett.100.117204 ↗
19. Appl. Phys. Lett. · 2013 · 102 · 06241110.1063/1.4792528 ↗
20. Appl. Phys. Lett. · 2009 · 94 · 16250510.1063/1.3123169 ↗
21. J. Appl. Phys. · 2009 · 105 · 12370710.1063/1.3148862 ↗
22. Small · 2008 · 4 · 75110.1002/smll.200700936 ↗
23. J. Cryst. Growth. · 2009 · 311 · 338910.1016/j.jcrysgro.2009.04.025 ↗
24. J. Cryst. Growth. · 2006 · 289 · 38110.1016/j.jcrysgro.2005.11.117 ↗
25. RSC Adv. · 2012 · 2 · 480210.1039/c2ra01000c ↗
26. J. Phys. Chem. C · 2013 · 117 · 734810.1021/jp3120572 ↗
27. Appl. Phys. Lett. · 2007 · 90 · 12311710.1063/1.2715119 ↗
28. Jpn. J. Appl. Phys. · 2002 · 41 · 445410.1143/JJAP.41.4454 ↗
29. Nano Lett. · 2006 · 6 · 70410.1021/nl052456q ↗
30. Phy. Rev. B · 2010 · 81 · 04530210.1103/PhysRevB.81.045302 ↗
31. J. Appl. Phys. · 2013 · 113 · 04310210.1063/1.4775492 ↗
32. J. Appl. Phys. · 2005 · 97 · 06130110.1063/1.1868059 ↗
33. J. Appl. Phys. · 2008 · 104 · 07430910.1063/1.2980341 ↗
34. Light: Science & Applications · 2012 · 1 · e2210.1038/lsa.2012.22 ↗
35. Light: Science & Applications · 2014 · 3 · e13910.1038/lsa.2014.20 ↗
36. Appl.Surface Science. · 2008 · 256 · 604010.1016/j.apsusc.2010.03.116 ↗
37. Appl. Phys. Lett. · 2011 · 99 · 16251210.1063/1.3654151 ↗