Tunable electronic properties of silicon nanowires under strain and electric bias
Source abstract
Abstract
The electronic structure characteristics of silicon nanowires under strain and electric bias are studied using first-principles density functional theory. The unique wire-like structure leads to distinct spatial distribution of carriers, which can be tailored by applying tensile and compressive strains, as well as by an electric bias. Our results indicate that the combined effect of strain and electric bias leads to tunable electronic structures that can be used for piezo-electric devices.
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Research context
OpenAlex topics: Nanowire Synthesis and Applications · Advancements in Semiconductor Devices and Circuit Design · Semiconductor materials and devices
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Clark Atlanta University 1 Department of Physics and Center for Functional Nanoscale Materials, , Atlanta, Georgia 30314, USA
Georgia Perimeter College 2 , Decatur, Georgia 30034, USA
Funding
National Science Foundation
References (28)
Show source-provided references
1. Nature · 2001 · 409 · 6610.1038/35051047 ↗
2. ACS Appl. Mater. Interfaces · 2013 · 5 · 975210.1021/am402889k ↗
3. Small · 2010 · 6 · 170510.1002/smll.201000972 ↗
4. Nature · 2002 · 420 · 5710.1038/nature01141 ↗
5. Nano Lett. · 2003 · 3 · 14910.1021/nl025875l ↗
6. Appl. Phys. Lett. · 2004 · 84 · 417610.1063/1.1755846 ↗
7. Proc. Natl. Acad. Sci. USA · 2005 · 102 · 1004610.1073/pnas.0504581102 ↗
8. Nature · 2006 · 441 · 48910.1038/nature04796 ↗
9. Nano Lett. · 2009 · 9 · 241810.1021/nl9010854 ↗
10. Energy Environ. Sci. · 2013 · 6 · 71910.1039/c3ee24182c ↗
11. Eur. J. Inorg. Chem. · 2010 · 2010 · 426410.1002/ejic.201000634 ↗
12. J. Am. Chem. Soc. · 2009 · 131 · 1773810.1021/ja908085c ↗
13. Appl. Phys. Lett. · 2008 · 93 · 03310510.1063/1.2929373 ↗
14. Appl. Phys. Lett. · 2007 · 91 · 23311710.1063/1.2821113 ↗
15. J. Phys. Chem. C · 2010 · 114 · 970210.1021/jp102514b ↗
16. J. Phys. Chem. C · 2008 · 112 · 1568310.1021/jp802591v ↗
17. Appl. Phys. Lett. · 2007 · 91 · 26310710.1063/1.2826267 ↗
18. ChemPhysChem. · 2011 · 12 · 130210.1002/cphc.201100030 ↗
19. J. Appl. Phys. · 2011 · 109 · 08310610.1063/1.3576100 ↗
20. Nano Lett. · 2010 · 10 · 124810.1021/nl9037856 ↗
21. 23rd IEEE International Conference (MEMS)
22. Nat. Nanotech. · 2006 · 1 · 4210.1038/nnano.2006.53 ↗
23. Phys. Rev. B · 2007 · 75 · 23330210.1103/PhysRevB.75.233302 ↗
24. J. Chem. Phys. · 1990 · 92 · 50810.1063/1.458452 ↗
25. J. Chem. Phys. C · 2011 · 115 · 945810.1021/jp201761p ↗
26. Nano Lett. · 2010 · 10 · 11610.1021/nl9029972 ↗
27. Phys. Rev. B · 2008 · 77 · 19532510.1103/PhysRevB.77.195325 ↗
28. Nano. Lett. · 2008 · 8 · 334110.1021/nl8017725 ↗