Shape modification of Si nanowires by using faceted silicide catalysts nucleated in Au-Si catalyst solution during the growth
Source abstract
Abstract
The shape modification of Si nanowires is demonstrated using faceted solid silicide catalysts. The Si nanowires were grown on Si(111) substrates covered with Au as a catalyst using MnCl2 and Si powders as source materials. The solid silicide catalysts were nucleated and formed in the Au-Si catalyst solution at the top of the nanowires during the growth. The faceted solid silicides grew larger with increased growth time and played a role as a solid catalyst. The faceted shape of the catalyst defines the shape of the faceted Si nanowire. The squared Si nanowires were grown with the growth direction of Si[111] and the sidewalls of {110} and {211} planes. The growth evolution of the faceted Si nanowires occurs by a vapor-liquid-solid mechanism followed by the silicide vapor-solid-solid mechanism.
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Research context
OpenAlex topics: Nanowire Synthesis and Applications · Semiconductor materials and interfaces · Chalcogenide Semiconductor Thin Films
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Shizuoka University 1 Graduate School of Science and Technology, , 3-5-1 Johoku, Naka-ku, Hamamatsu 432-8011, Japan
Shizuoka University 2 Graduate School of Engineering, , 3-5-1 Johoku, Naka-ku, Hamamatsu 432-8561, Japan
Shizuoka University 3 Research Institute of Electronics, , 3-5-1 Johoku, Naka-ku, Hamamatsu 432-8011, Japan
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