journal article·2013-09-01Open access

Shape modification of Si nanowires by using faceted silicide catalysts nucleated in Au-Si catalyst solution during the growth

Erchao Meng, Wen Li, Kaito Nakane, Yuya Shirahashi, Yasuhiro Hayakawa, Hirokazu Tatsuoka

AIP Advances· Volume 3· Issue 9

Abstract

The shape modification of Si nanowires is demonstrated using faceted solid silicide catalysts. The Si nanowires were grown on Si(111) substrates covered with Au as a catalyst using MnCl2 and Si powders as source materials. The solid silicide catalysts were nucleated and formed in the Au-Si catalyst solution at the top of the nanowires during the growth. The faceted solid silicides grew larger with increased growth time and played a role as a solid catalyst. The faceted shape of the catalyst defines the shape of the faceted Si nanowire. The squared Si nanowires were grown with the growth direction of Si[111] and the sidewalls of {110} and {211} planes. The growth evolution of the faceted Si nanowires occurs by a vapor-liquid-solid mechanism followed by the silicide vapor-solid-solid mechanism.
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Research context

OpenAlex topics: Nanowire Synthesis and Applications · Semiconductor materials and interfaces · Chalcogenide Semiconductor Thin Films

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Shizuoka University 1 Graduate School of Science and Technology, , 3-5-1 Johoku, Naka-ku, Hamamatsu 432-8011, Japan

Shizuoka University 2 Graduate School of Engineering, , 3-5-1 Johoku, Naka-ku, Hamamatsu 432-8561, Japan

Shizuoka University 3 Research Institute of Electronics, , 3-5-1 Johoku, Naka-ku, Hamamatsu 432-8011, Japan

References (17)

Show source-provided references
1. Materials Today · 2006 · 9 · 1810.1016/S1369-7021(06)71650-9 ↗
2. Appl. Phys. Lett. · 1964 · 4 · 8910.1063/1.1753975 ↗
3. Appl. Phys. Lett. · 2001 · 78 · 221410.1063/1.1363692 ↗
4. Nano Lett. · 2013 · 13 · 33110.1021/nl300121p ↗
5. Rep. Prog. Phys. · 2010 · 73 · 11450110.1088/0034-4885/73/11/114501 ↗
6. J. Mater. Chem. · 2009 · 19 · 84910.1039/b817391e ↗
7. Chem. Rev. · 2010 · 110 · 36110.1021/cr900141g ↗
8. Nanoscale Res. Lett. · 2011 · 6 · 18710.1186/1556-276X-6-187 ↗
9. Thin Solid Films · 2006 · 508 · 7010.1016/j.tsf.2005.07.331 ↗
10. J. Cryst. Growth · 2001 · 229 · 52710.1016/S0022-0248(01)01222-2 ↗
11. Thin Solid Films · 2001 · 381 · 23110.1016/S0040-6090(00)01749-1 ↗
12. Phys. stat. sol. (a) · 2009 · 206 · 23310.1002/pssa.200982226 ↗
13. Bull. Alloy Phase Diagrams · 1982 · 4 · 19010.1007/BF02884878 ↗
14. Massalski · 1990
15. 1979 · 294
16. J. Cryst. Growth · 2001 · 229 · 53210.1016/S0022-0248(01)01223-4 ↗
17. J. Appl. Phys. · 2005 · 97 · 02351810.1063/1.1834723 ↗