Temperature dependent Raman of BiTe nanotubes
Source abstract
Abstract
BiTe has been widely used as thermoelectric material. Here the BiTe nanotubes were synthesized by solvothermal method for the first time. The BiTe nanotubes were characterized via scanning electron microscope (SEM), X-ray diffraction (XRD) as well as transmission electron microscope (TEM), indicating the high crystal qualities of as-prepared products. The lattice dynamics of BiTe nanotubes was further studied via the micro-Raman scattering spectra in the temperature range of 103-593 K. Both the peak position and mode width of 2Ag1, 1Eg1 exhibit an obvious change with decreased temperature. All the Eg1, A1g1, Eg2, A1g2 modes have ultralow temperature coefficients of 1.85 × 10−5, 1.98 × 10−4, 1.09 × 10−4, 2.34 × 10−4 cm−1/K, respectively, which should be beneficial for obtaining high figure of merit (ZT) and confirm the outstanding thermoelectric performance of BiTe nanotubes.
Source: crossref · Quality: baseline
Research context
OpenAlex topics: Advanced Thermoelectric Materials and Devices · Topological Materials and Phenomena · 2D Materials and Applications
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Synergetic Innovation Center for Quantum Effects and Application, Key Laboratory of Low-dimensional Quantum Structures and Quantum Control of Ministry of Education, School of Physics and Electronics, Hunan Normal University 1 , Changsha 410081, China
College of Mechanical engineering and Photoelectric Physics, and Hunan Engineering Laboratory for Preparation Technology of Polyvinyl Alcohol Fiber Material, Huaihua University 2 , Huaihua, Hunan 418008, China
Department of Basic Course, Hunan Police Academy 3 , Changsha 410138, China
Funding
National Natural Science Foundation of China
References (59)
Show source-provided references
1. Helicity dependent photocurrent in electrically gated (Bi1−xSbx)2Te3 thin films10.1038/s41467-017-00711-4 ↗
2. Colloquium: Topological insulators
3. Topological insulators in Bi2Se3, Bi2Te3 and Sb2Te3 with a single Dirac cone on the surface10.1038/nphys1270 ↗
4. Thermoelectric properties of topological insulator Bi2Te3 Sb2Te3, and Bi2Se3 thin film quantum wells10.1063/1.4896680 ↗
5. Tuning thermoelectricity in a Bi2Se3 topological insulator via varied film thickness10.1088/1367-2630/18/1/015008 ↗
6. Synthesis and thermoelectric properties of Bi2Se3 nanostructures10.1007/s11671-010-9795-7 ↗
7. Topological insulators for thermoelectrics10.1038/s41535-017-0054-3 ↗
8. Quantum materials for thermoelectricity10.1557/mrs.2018.34 ↗
9. High thermoelectric performance of p-type SnTe via a synergistic band engineering and nanostructuring approach10.1021/ja500860m ↗
10. Strained endotaxial nanostructures with high thermoelectric figure of merit10.1038/nchem.955 ↗
11. High thermoelectric performance of nonequilibrium synthesized CeFe4Sb12 composite with multi-scaled nanostructures10.1063/1.4827555 ↗
12. All-scale hierarchical thermoelectrics: MgTe in PbTe facilitates valence band convergence and suppresses bipolar thermal transport for high performance10.1039/c3ee42187b ↗
13. Weak electron phonon coupling and deep level impurity for high thermoelectric performance Pb1−xGaxTe
14. Rhombohedral to cubic conversion of GeTe via MnTe alloying leads to ultralow thermal conductivity, electronic band convergence and high thermoelectric performance10.1021/jacs.7b13611 ↗
15. High thermoelectric performance in Bi0.46Sb1.54Te3 nanostructured with ZnTe
16. Thermal conductivity in Bi0.55Sb1.5Te3+x and the role of dense dislocation arrays at grain boundaries10.1126/sciadv.aar5606 ↗
17. High thermoelectric performance of p-BiSbTe compounds prepared by ultra-fast thermally induced reaction10.1039/c7ee02677c ↗
18. Tailoring thermoelectric properties through structure and morphology in chemically synthesized n-type bismuth telluride nanostructures10.1021/acs.inorgchem.7b00336 ↗
19. Significant enhancement in the thermoelectric performance of a bismuth telluride nanocompound through brief fabrication procedures10.1021/am3002764 ↗
20. Hardening of Bi-Te based alloys by dispersing B4C nanoparticles10.1016/j.actamat.2015.06.052 ↗
21. Enhancement in figure of merit (ZT) by annealing of BiTe nanostructures synthesized by microwave-assisted flash combustion10.1007/s11664-013-2864-9 ↗
22. Investigation of the effects of compressive and tensile strain on n-type bismuth telluride and p-type antimony telluride nanocrystalline thin films for use in flexible thermoelectric generators10.1016/j.jallcom.2015.09.039 ↗
23. Tapered BiTe nanowires synthesis by galvanic displacement reaction of compositionally modulated NiFe nanowires10.1016/j.electacta.2012.12.011 ↗
24. Phonon and Raman scattering of two-dimensional transition metal dichalcogenides from monolayer, multilayer to bulk material10.1039/c4cs00282b ↗
25. Physical origin of Davydov splitting and resonant Raman spectroscopy of Davydov components in multilayer MoTe210.1103/physrevb.93.115409 ↗
26. Activation of new Raman modes by inversion symmetry breaking in type II Weyl semimetal candidate T′−MoTe210.1021/acs.nanolett.6b02666 ↗
27. Flexible n-type thermoelectric materials by organic intercalation of layered transition metal dichalcogenide TiS210.1038/nmat4251 ↗
28. Dispersive phonon linewidths: The E2 phonons of ZnO10.1103/physrevlett.90.055510 ↗
29. Temperature-dependent Raman scattering of ZnSe nanowires10.4236/ampc.2016.612029 ↗
30. Thickness-dependent thermal conductivity of suspended two-dimensional single-crystal In2Se3 layers grown by chemical vapor deposition10.1021/acs.jpcc.5b10905 ↗
31. Structure and optical properties of pure and doped ZnO 1D nanostructures10.1016/j.matlet.2012.10.041 ↗
32. Luminescence and local photonic confinement of single ZnSe:Mn nanostructure and the shape dependent lasing behavior10.1088/0957-4484/24/5/055201 ↗
33. The effect of dopant and optical micro-cavity on the photoluminescence of Mn-doped ZnSe nanobelts10.1186/1556-276x-8-314 ↗
34. Bound exciton and optical properties of SnO2 one-dimensional nanostructures10.1021/jp808422a ↗
35. The fingerprint of Te-rich and stoichiometric Bi2Te3 nanowires by Raman spectroscopy10.1088/0957-4484/27/7/075706 ↗
36. Raman spectroscopy of few-quintuple layer topological insulator Bi2Se3 nanoplatelets10.1021/nl200773n ↗
37. Enhancement in figure of merit (ZT) by annealing of BiTe nanostructures synthesized by microwave-assisted flash combustion10.1007/s11664-013-2864-9 ↗
38. Raman spectroscopy of Bi-Te thin films
39. Electrochemically deposited BiTe-based nanowires for thermoelectric applications10.1063/1.4866117 ↗
40. Synthesis and Raman spectroscopy of multiphasic nanostructured Bi-Te networks with tailored composition10.1021/jp402879h ↗
41. Temperature dependent Raman scattering studies of three dimensional topological insulators Bi2Se310.1063/1.4871860 ↗
42. Raman spectroscopy to probe residual stress in ZnO nanowire10.1002/jrs.3004 ↗
43. Physical vapor deposition synthesis of two-dimensional orthorhombic SnS flakes with strong angle/temperature-dependent Raman responses10.1039/c5nr07675g ↗
44. Temperature dependence of Raman shifts in layered ReSe2 and SnSe2 semiconductor nanosheets10.1063/1.4926508 ↗
45. Temperature-dependent Raman responses of the vapor-deposited tin selenide ultrathin flakes10.1021/acs.jpcc.6b12059 ↗
46. Large area chemical vapor deposition of monolayer transition metal dichalcogenides and their temperature dependent Raman spectroscopy studies10.1039/c5nr07401k ↗
47. Ultrathin 2D GeSe2 rhombic flakes with high anisotropy realized by Van der Waals epitaxy10.1002/adfm.201703858 ↗
48. Enhanced thermoelectric performance of nanostructured topological insulator Bi2Se310.1063/1.4907252 ↗
49. Dynamic surface electronic reconstruction as symmetry-protected topological orders in topological insulator Bi2Se3
50. Temperature-dependent raman scattering of large size hexagonal Bi2Se3 single-crystal nanoplates10.3390/app8101794 ↗
51. Thermal conductivity of suspended single crystal CH3NH3PbI3 platelets at room temperature10.1039/c7nr01894k ↗
52. Thickness-dependent thermal conductivity of suspended two-dimensional single-crystal In2Se3 layers grown by chemical vapor deposition10.1021/acs.jpcc.5b10905 ↗
53. Temperature dependent Raman and photoluminescence of an individual Sn-doped CdS branched nanostructure10.1088/1367-2630/17/6/063024 ↗
54. Temperature-dependent phonon shifts in monolayer MoS210.1063/1.4819337 ↗
55. Temperature dependent Raman spectroscopy of chemically derived few layer MoS2 and WS2 nanosheets10.1063/1.4866782 ↗
56. Temperature dependent phonon shifts in single-layer WS210.1021/am404847d ↗
57. Thermal expansion, anharmonicity and temperature-dependent Raman spectra of single- and few-layer MoSe2 and WSe210.1002/cphc.201400020 ↗
58. Temperature dependent phonon shifts in few-layer black phosphorus10.1021/am509056b ↗
59. Temperature-dependent Raman spectroscopy of titanium trisulfide (TiS3) nanoribbons and nanosheets10.1021/acsami.5b07492 ↗