journal article·2016-05-01Open access

Evidence for ferromagnetic coupling at the doped topological insulator/ferrimagnetic insulator interface

Wenqing Liu, Liang He, Yan Zhou, Koichi Murata, Mehmet C. Onbasli, Caroline A. Ross, Ying Jiang, Yong Wang, Yongbing Xu, Rong Zhang, Kang. L. Wang

AIP Advances· Volume 6· Issue 5

Abstract

One of the major obstacles of the magnetic topological insulators (TIs) impeding their practical use is the low Curie temperature (Tc). Very recently, we have demonstrated the enhancement of the magnetic ordering in Cr-doped Bi2Se3 by means of proximity to the high-Tc ferrimagnetic insulator (FMI) Y3Fe5O12 and found a large and rapidly decreasing penetration depth of the proximity effect, suggestive of a different carrier propagation process near the TI surface. Here we further present a study of the interfacial magnetic interaction of this TI/FMI heterostrucutre. The synchrotron-based X-ray magnetic circular dichroism (XMCD) technique was used to probe the nature of the exchange coupling of the Bi2−xCrxSe3/Y3Fe5O12 interface. We found that the Bi2−xCrxSe3 grown on Y3Fe5O12(111) predominately contains Cr3+ cations, and the spin direction of the Cr3+ is aligned parallel to that of tetrahedral Fe3+ of the YIG, revealing a ferromagnetic exchange coupling between the Bi2−xCrxSe3 and the Y3Fe5O12.
Source: crossref · Quality: baseline

Research context

OpenAlex topics: Topological Materials and Phenomena · Advanced Condensed Matter Physics · Graphene research and applications

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

University of York 1 Spintronics and Nanodevice Laboratory, Department of Electronics, , York YO10 5DD, United Kingdom

Nanjing University 2 York-Nanjing Joint Centre for Spintronics and Nano Engineering (YNJC), School of Electronics Science and Engineering, , Nanjing 210093, China

Hong Kong University 3 Physics Department, , Hong Kong

University of California 4 Department of Electrical Engineering, , Los Angeles, California 90095, USA

Massachusetts Institute of Technology 5 Department of Materials Science and Engineering, , Cambridge, Massachusetts 02139, USA

Zhejiang University 6 Centre of Electron Microscopy, State Key Laboratory of Silicon Materials, Department of Materials Science and Engineering, , Hangzhou, 310027, China

Funding

State Key Programme for Basic Research of China · Science and Technology Facilities Council · National Natural Science Foundation of China · Defense Sciences Office, DARPA

References (48)

Show source-provided references
1. Nature · 2010 · 466 · 31010.1038/466310a ↗
2. Rev. Mod. Phys. · 2010 · 82 · 304510.1103/RevModPhys.82.3045 ↗
3. Phys. Rev. Lett. · 2008 · 101 · 14680210.1103/PhysRevLett.101.146802 ↗
4. Phys. Rev. Lett. · 2007 · 98 · 110.1103/PhysRevLett.98.106803 ↗
5. 2010
6. Nat. Phys. · 2010 · 7 · 3210.1038/nphys1838 ↗
7. Science · 2013 · 340 · 16710.1126/science.1234414 ↗
8. Phys. Rev. Lett. · 2010 · 104 · 14680210.1103/PhysRevLett.104.146802 ↗
9. Phys. Rev. B · 2010 · 81 · 12140110.1103/PhysRevB.81.121401 ↗
10. Appl. Phys. Lett. · 2015 · 107 · 08240410.1063/1.4929585 ↗
11. Phys. Rev. B · 2005 · 71 · 11521410.1103/PhysRevB.71.115214 ↗
12. AIP Adv. · 2013 · 3 · 0
13. Phys. Rev. B · 2002 · 65 · 11521210.1103/PhysRevB.65.115212 ↗
14. Phys. Rev. B · 2010 · 81 · 19520310.1103/PhysRevB.81.195203 ↗
15. Phys. B Condens. Matter · 2002 · 311 · 29210.1016/S0921-4526(01)00975-9 ↗
16. Appl. Phys. Lett. · 2012 · 100 · 08240410.1063/1.3688043 ↗
17. AIP Adv. · 2014 · 4 · 12713610.1063/1.4904900 ↗
18. ACS Nano · 2015 · 9 · 1023710.1021/acsnano.5b03980 ↗
19. Appl. Phys. Lett. · 2012 · 100 · 24240310.1063/1.4729056 ↗
20. Adv. Mater. · 201510.1002/adma.201501254 ↗
21. J. Phys. Condens. Matter · 2015 · 27 · 24560210.1088/0953-8984/27/24/245602 ↗
22. Phys. Rev. B · 2013 · 87 · 08543110.1103/PhysRevB.87.085431 ↗
23. Phys. Rev. B · 2013 · 88 · 14443010.1103/PhysRevB.88.144430 ↗
24. Phys. Rev. B · 2013 · 88 · 22440110.1103/PhysRevB.88.224401 ↗
25. Appl. Phys. Lett. · 2013 · 103 · 20240910.1063/1.4831987 ↗
26. Phys. Rev. B · 2013 · 88 · 08140710.1103/PhysRevB.88.081407 ↗
27. Phys. Rev. Lett. · 2013 · 110 · 18680710.1103/PhysRevLett.110.186807 ↗
28. Nat. Phys. · 2010 · 7 · 3210.1038/nphys1838 ↗
29. Phys. Rev. B · 2012 · 86 · 05443010.1103/PhysRevB.86.054430 ↗
30. Phys. Rev. B · 2012 · 85 · 08130510.1103/PhysRevB.85.081305 ↗
31. Nano Lett. · 2011 · 11 · 407910.1021/nl201275q ↗
32. Nano Lett. · 2015 · 15 · 76410.1021/nl504480g ↗
33. Appl. Phys. Lett. · 2014 · 105 · 01240810.1063/1.4890239 ↗
34. Phys. Rev. Lett. · 2013 · 147207 · 1
35. J. Appl. Phys. · 2011 · 109 · 08390810.1063/1.3572270 ↗
36. Phys. Rev. Lett. · 2013 · 111 · 02720310.1103/PhysRevLett.111.027203 ↗
37. Coord. Chem. Rev. · 2014 · 277–278 · 9510.1016/j.ccr.2014.03.018 ↗
38. Appl. Phys. Lett. · 2014 · 104 · 14240710.1063/1.4871001 ↗
39. J. Appl. Phys. · 2015 · 117 · 17E12110.1063/1.4916296 ↗
40. Sci. Rep. · 2015 · 5 · 1191110.1038/srep11911 ↗
41. Opt. Express · 2012 · 20 · 2850710.1364/OE.20.028507 ↗
42. Appl. Phys. Lett. · 2012 · 101 · 15240510.1063/1.4759039 ↗
43. Nano Lett. · 2014 · 14 · 345910.1021/nl500973k ↗
44. Rev. Mod. Phys. · 2010 · 82 · 153910.1103/RevModPhys.82.1539 ↗
45. Phys. Rev. Lett. · 2012 · 108 · 03680510.1103/PhysRevLett.108.036805 ↗
46. Phys. Rev. B · 2001 · 63 · 22442010.1103/PhysRevB.63.224420 ↗
47. Surf. Rev. Lett. · 2002 · 09 · 84910.1142/S0218625X02003044 ↗
48. Nano Lett. · 2011 · 11 · 407910.1021/nl201275q ↗