Formation of AlGaN and GaN epitaxial layer with high p-carrier concentration by pulse supply of source gases
Source abstract
Abstract
A drastic increase in the p-type carrier concentration and decrease in the activation energy of an acceptor are achieved by using a method of pulse supply of the source gases for AlGaN and GaN. This method offers a new way of producing a low-resistance p-AlGaN and p-GaN epitaxial layer.
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Research context
OpenAlex topics: GaN-based semiconductor devices and materials · Photocathodes and Microchannel Plates · Plasma Diagnostics and Applications
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Affiliations
Ritsumeikan University 1 , Ritsumeikan Global Innovation Research Organization, 1-1-1, Noji-Higashi, Kusatsu, Shiga 525-8577, Japan
Riken Institute 2 , 2-1, Hirosawa, Wako-shi, Saitama 561-0190, Japan
References (9)
Show source-provided references
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